Time domain RF characterisation of a thin-film metamorphic HEMT under modulated backside illumination

R. Vandersmissen,D. Schreurs,S. Vandenberghe,G. Borghs
DOI: https://doi.org/10.1109/ARFTGS.2002.1214680
2002-06-07
Abstract:It is shown in this paper how the opto-electrical interaction of a microwave device can be characterized by combining a large-signal network analyzer set-up with a modulated laser module. The concept is demonstrated by measuring a "thin film" M(etamorphic) HEMT under modulated optical (1550 nm laser light) illumination. The advantage of this approach is that the time-domain characteristics of the electrical currents, generated by the modulated laser light, can be visualised and analysed.
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