A GaAs monolithic frequency divider using source coupled FET Logic

S. Katsu,S. Nambu,S. Shimano,G. Kanô
DOI: https://doi.org/10.1109/EDL.1982.25549
IF: 4.8157
1982-08-01
IEEE Electron Device Letters
Abstract:A GaAs monolithic binary frequency divider based on the new source coupled FET logic (SCFL) is reported. A very wide range for the threshold voltage in the constituent FET's is allowable because in principle the SCFL operates in a current mode. A single-clocked SCFL master-slave frequency divider was successfully fabricated with 1µm-gate MESFET's with a threshold voltage ranging from -0.7 V to +0.2 V. The highest operating frequency was 2.5 GHz at the power consumption of 25 mW.
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