Abstract:InP quantum dots (QDs) are regarded as the most desirable candidate to replace the role of CdSe QDs in the applications of bio-labeling, LEDs, solar cells, etc, because InP is more environmentally friendly compared to Cd based QDs, and could also offer a tunable emission from blue to near-infrared. Nevertheless, the studies and applications of InP QDs are rather sparse in comparison with CdSe QDs, which are principally caused by significant difficulties in its synthesis. In this report, we developed a novel method for the synthesis of InPZnS/ZnS QDs by using zinc phosphide as phosphorus precursor, and the zinc and sulfur precursors were also added at the start of reaction, which allows the continuous injection of phosphine gas into the reaction, resulting in high quality InPZnS/ZnS quantum dots with emission up to 680 nm. The core synthesis and shell coating were separated by controlling the reaction temperature. During the first 30 minutes, the temperature of reaction solution was kept at 250 °C to grow the InPZnS core QDs. Then, the coating of ZnS shell was happened and kept about 1 hour to guarantee the complete decomposition of 1-dodecanethiol (DDT) after the reaction temperature was increased to 300 °C. The biggest advantage of this synthetic method is the tunable emission region from blue to near-infrared. The effects of reaction parameters were systematically investigated. We observed that the molar ratio of In: myristic acid (MA) and that of In: Zn (S) had significant influences on the size of the InP QDs. The structure of InPZnS/ZnS QDs was confirmed by transmission electron microscope (TEM), X-ray powder diffraction (XRD), and energy dispersive X-ray analyzer (EDX). TEM characterization indicated the final core/shell InPZnS/ZnS QDs were good monodispersity with an average size of 7 nm. Furthermore, we investigated the versatility of this method by using other phosphorus precursor. The injection pump leaded to a continuous supply of phosphorus precursor on a timescale and reacted with indium precursor to form InP QDs. The final sample showed an emission at 710 nm. The present method gives access to larger sized InP QDs, making it prosperous for applications in biological labeling.

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Formation of Size-Tunable and Nearly Monodisperse InP Nanocrystals: Chemical Reactions and Controlled Synthesis

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High-Efficiency Pure-Red CsPbI 3 Quantum Dot Light-Emitting Diodes Enabled by Strongly Electrostatic Potential Solvent and Sequential Ligand Post-treatment Process

Sequential Growth of InP Quantum Dots and Coordination Between Interfacial Heterovalency and Shell Confinement: Implication for Light-Emitting Devices

Green InP/ZnSeS/ZnS Core Multi‐Shelled Quantum Dots Synthesized with Aminophosphine for Effective Display Applications

Water-Soluble Alumina-Coated Indium Phosphide Core-Shell Quantum Dots with Efficient Deep-Red Emission Beyond 700 nm

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Inorganic Solid Phosphorus Precursor of Sodium Phosphaethynolate for Synthesis of Highly Luminescent InP-Based Quantum Dots

ZnF 2 -Assisted Synthesis of Highly Luminescent InP/ZnSe/ZnS Quantum Dots for Efficient and Stable Electroluminescence

Synthesis of InPZnS/ZnS Quantum Dots by Continuous Injection of Phosphorus Precursor

Study of the Interfacial Oxidation of InP Quantum Dots Synthesized from Tris(dimethylamino)phosphine

Stable and Efficient Upconversion Single Red Emission from CsPbI3 Perovskite Quantum Dots Triggered by Upconversion Nanoparticles

Narrowing the photoluminescence bandwidth of InP‐based colloidal quantum dots through photon‐triggered isolation