Submicron pseudomorphic Al0.2 Ga0.8As/In0.25Ga0.75 As-HFET made by conventional optical lithography for microwave circuit applications above 100GHz

H. Meschede,J. Kraus,R. Bertenburg,W. Brockerhoff,W. Prost,K. Heime,H. Nickel,W. Schlapp,R. Losch
1990-09-01
Abstract:In this work the device performance of a submicrometer pseudomorphic FET made by conventional optical lithography using a single-layer photoresist will be presented. With this technique a gate-length of 0.6μm can be reproducible achieved. Using a multiple finger structure with air-bridge technology a maximum taransconductance of 47OmS/mm and a cutoff-frequency of 111GHz was obtained.
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