A Ti salicide process for 0.10 /spl mu/m gate length CMOS technology

J. Kittl,Qi-Zhong Hong,D. Prinslow,G. Misium
DOI: https://doi.org/10.1109/VLSIT.1996.507775
1996-06-11
Abstract:The fundamental issues for extension of a Ti salicide process to 0.1 /spl mu/m gate length CMOS technologies are presented for the first time. We report the first process to achieve low sheet resistance of 4 /spl Omega//sq at an ultra-narrow 0.10 /spl mu/m gate length (with deposited Ti=27 nm for TiSi/sub 2/=50 nm). Successful implementation into a sub-0.18 /spl mu/m gate length CMOS technology is demonstrated.
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