Editorial: Preventive medicine, an integral component of cancer centers.

J. Yarbro

DOI: https://doi.org/10.1016/0091-7435(75)90073-0

IF: 5.1

1975-06-01

Preventive Medicine

Abstract:

What problem does this paper attempt to address?

Omnidirectional, Thin Metasurface Exhibiting Selective Absorption for Un-Polarized Broadband Incidence

Qiansen Xie,Huajun Feng,Shangliang Wu,Xu Liu,Zhihai Xu

DOI: https://doi.org/10.1364/oe.467446

IF: 3.8

2022-01-01

Optics Express

Abstract:Thin devices with large areas have strong and omnidirectional absorption over a wide bandwidth and are in demand for applications such as energy harvesting, structural color, and vehicle LiDAR (laser detection and ranging). Despite persistent efforts in the design and fabrication of such devices, the simultaneous realization of all these desired properties remains a challenge. In this study, a 190-nm-thick metasurface with an area of 3 cm2, incorporating dielectric cylinder arrays, a chromium layer, a silicon nitride (SiNx) layer, and an aluminum layer is theoretically and experimentally demonstrated. The developed device achieves an average absorptivity of ∼99% (97% in the experiment) in the entire visible spectrum 400-700 nm. Moreover, it exhibits strong absorption over a wide range of incident angles (∼91% and 90% at 60° in the calculation and experiment, respectively). Importantly, the feasibility of applying the developed metasurface absorber to solar thermophotovoltaics and vehicle LiDAR (laser detection and ranging) has been explored. Moreover, the photoresist can be replaced by other glues and easily scaled up to a large area using the roll-to-roll nanoimprinting process. With the excellent spectral properties and performance, this device is promising for large-area applications.
Ultrahigh Sensitivity Solar‐Blind UV Detection via Multistage‐Concentric‐Annulus Architecture Metasurface

Qing Cai,Ting Zhi,Haifan You,Pengfei Shao,Kai Chen,Jin Wang,Hui Guo,Junjun Xue,Tao Tao,Bin Liu,Zili Xie,Xun Cao,Hai Lu,Youdou Zheng,Rong Zhang,Dunjun Chen

DOI: https://doi.org/10.1002/adom.202301333

IF: 9

2023-07-22

Advanced Optical Materials

Abstract:A facile and distinctive diffraction metasurface is presented that holds immense potential for advancing the development of next‐generation UV detection materials and devices with enhanced sensitivity and reliability. The findings of this study represent a significant contribution to the field and are expected to inspire further research and advancements in UV photodetection technology. High‐sensitivity photodetection capability has become an indispensable requirement for detecting feeble solar‐blind ultraviolet (UV) light. Micro‐nano metallic metasurface structures are employed to enhance the detector photoelectric performances. However, existing approaches are confronted with bottlenecks of structure simplification and efficacy mediocrity. Here, a distinctive diamond solar‐blind UV photodetector with a synthetic multistage‐concentric‐annulus (MCA) architecture metasurface is reported, which is prepared through a facile and peculiar Fraunhofer diffraction technique. The detector achieves an excellent photo‐to‐dark‐current ratio of 2.4×108 and maintains an extremely low dark current on the order of pA magnitude. The intrinsic response peak and resonance absorption phenomenon in solar‐blind UV are evident from the optical properties. Moreover, the surface potential distribution intuitively reveals that plasmon resonance enhances the UV scattering and absorption cross sections, thus facilitating the photogeneration of carriers. Meanwhile, it expressly demonstrates that multi‐level dipole interaction in the MCA structure accelerates the separation and extraction of electron–hole pairs through enhancing the localized electric field intensity. In addition, a wide range of variable temperature measurements further prove the device possesses capacity for working in extreme environments. This photodetection technology by virtue of a delicate and viable diffraction metasurface is anticipated to provide a leap forward for future applications in wide‐band‐gap semiconductor UV detectors.

materials science, multidisciplinary,optics
Detector of UV light chirality based on a diamond metasurface

Jiajing Feng,Zhongzhu Liang,Xiaoyan Shi,Yongjun Dong,Fuming Yang,Xiqing Zhang,Rui Dai,Yan Jia,Hua Liu,Sixuan Li

DOI: https://doi.org/10.1364/OE.497854

2023-10-09

Abstract:Circularly polarized light (CPL) finds diverse applications in fields such as quantum communications, quantum computing, circular dichroism (CD) spectroscopy, polarization imaging, and sensing. However, conventional techniques for detecting CPL face challenges related to equipment miniaturization, system integration, and high-speed operation. In this study, we propose a novel design that addresses these limitations by employing a quarter waveplate constructed from a diamond metasurface, in combination with a linear polarizer crafted from metallic aluminum. The diamond array, with specific dimensions (a = 84 nm, b = 52 nm), effectively transforms left-handed and right-handed circularly polarized light into two orthogonally linearly polarized beams who have a polarization degree of approximately 0.9. The aluminum linear polarizer then selectively permits the transmission of these transformed linearly polarized beams.Our proposed design showcases remarkable circular dichroism performance at a wavelength of 280 nm, concurrently maintaining high transmittance and achieving a substantial extinction ratio of 25. Notably, the design attains an ultraviolet wavelength transmission efficiency surpassing 80%. Moreover, our design incorporates a rotation mechanism that enables the differentiation of linearly polarized light and singly circularly polarized light. In essence, this innovative design introduces a fresh paradigm for ultraviolet circularly polarized light detection, offering invaluable insights and references for applications in polarization detection, imaging, biomedical diagnostics, and circular dichroic spectroscopy.
Super Absorbing Ultraviolet Metasurface

Kai Liu,Suhua Jiang,Dengxin Ji,Xie Zeng,Nan Zhang,Haomin Song,Yun Xu,Qiaoqiang Gan

DOI: https://doi.org/10.1109/lpt.2015.2428621

IF: 2.6

2015-01-01

IEEE Photonics Technology Letters

Abstract:Although intensive research efforts have been performed to realize compact/portable metamaterial absorbers, the super absorbing metasurface for ultraviolet (UV) wavelengths has not been reported. Here, we propose an aluminum-based metal-dielectric-metal patterned structure to realize super absorption and strong field localization for UV wavelengths. Its feasibility to function as a high performance substrate for UV surface-enhanced Raman spectroscopy will also be discussed.
All-Dielectric Metasurfaces: Near-Infrared Super-Absorbing All-Dielectric Metasurface Based on Single-Layer Germanium Nanostructures (Laser Photonics Rev. 12(9)/2018)

Jingyi Tian,Hao Luo,Qiang Li,Xuelu Pei,Kaikai Du,Min Qiu

DOI: https://doi.org/10.1002/lpor.201870039

2018-01-01

LASER & PHOTONICS REVIEWS

Abstract:In article number 1800076, Qiang Li and co-workers propose an ultrathin (≈0.13 λ0) germanium nanoantenna-based all-dielectric metasurface. Its near-unity absorption is realized by simultaneously excited electric dipole and magnetic dipole resonances inside each element. This design paves the way for realizing next generation optoelectronic devices aimed for high-speed photon detection and energy harvesting.
Near‐Infrared Super‐Absorbing All‐Dielectric Metasurface Based on Single‐Layer Germanium Nanostructures

Jingyi Tian,Hao Luo,Qiang Li,Xuelu Pei,Kaikai Du,Min Qiu

DOI: https://doi.org/10.1002/lpor.201800076

2018-01-01

LASER & PHOTONICS REVIEWS

Abstract:Strong near‐infrared absorption in ultrathin semiconductor layers is essential for increasing the speed and efficiency of photocarrier extraction in optoelectronic devices. However, the absorption of a free‐standing ultrathin film can never exceed 50% in principle. In this article, an all‐dielectric germanium metasurface absorber in the near‐infrared region (800–1600 nm) is proposed theoretically and experimentally. Near‐unity absorption can be achieved in such a subwavelength‐thin (≈0.13 λ 0 ) layer of nanostructures based on the destructive interference between simultaneously excited electric and magnetic dipoles inside each element in the backward direction in combination with the destructive interference between the scattered field and the incident field in the forward direction. Its response is both polarization‐independent and angle‐insensitive, with over 80% absorption at an incident angle up to 28°. This ultrathin and flexible design paves the way for realizing next generation optoelectronic devices aimed for high‐speed photon detection and energy harvesting.
Conceptual development and characterization of a diamond-based ultraviolet detector

Wei Jiang,Jaeshine Ahn,Chan Yuen Chuen,Lam Yee Loy

DOI: https://doi.org/10.1063/1.1149593

IF: 1.6

1999-02-01

Review of Scientific Instruments

Abstract:A metal–semiconductor–metal (MSM) structure ultraviolet (UV) photodetector has been designed and fabricated on chemical vapor deposition grown diamond and its performance has been characterized. A concept was envisioned of creating a new process by which 1 μm small gap spacing was achieved. This kind of detector can be operated at a lower bias voltage with a higher photoresponsivity in the UV range. The success of this device depended on the bilayer metal electrodes, good Ohmic contact, image reversal technique, direct writing process, and sacrificial layer technology. Current–voltage and capacitance–voltage characteristics, photoresponsivity, and quantum efficiency of planar MSM structures with Au/Ti–diamond contacts are presented.

instruments & instrumentation,physics, applied
Multi-band optical resonance of all dielectric metasurfaces toward high-performance ultraviolet sensing

Jie Zheng,Cheng Zhang,Hong Li,Xianchao Liu,Yijia Huang,Jianqi Zhu,Zhilin Yang,Ling Li

DOI: https://doi.org/10.1039/d3cp02634e

IF: 3.3

2023-07-11

Physical Chemistry Chemical Physics

Abstract:All-dielectric sensors featuring low-loss resonances have been proposed instead of plasmonic-based sensors. However, reported dielectric-based sensors generally work in the visible and near infrared regions, and detect the intensity variation of resonant modes because the electromagnetic energy is mainly confined inside of dielectric nanoparticles. It is a challenge to adjust the hotspots from the inside to the surface of all-dielectric metasurface. In this study, highly uniform Si3N4 all-dielectric metasurfaces have been successfully fabricated as sensing platforms by utilizing nanosphere self-assemble and plasma enhanced chemical vapor deposition techniques. Experimental and simulated results demonstrate that proposed Si3N4 all-dielectric metasurfaces exhibit multiple optical resonant modes in the ultraviolet and visible wavelength, and present distinctly field-confinement in the gaps of nanoparticles. The hotspots have been successfully adjusted to the surface of Si3N4 nanoparticles. Delightedly, Si3N4 all-dielectric metasurfaces show obviously wavelength shift as variation of the refractive index, and the sensitivity can reach to 707 nm/RIU for the trace detection as sensing substrates. Proposed Si3N4 all-dielectric metasurfaces are promising to act as high-sensitive sensing substrates in the ultraviolet and visible wavelength, and ease of high-throughput fabrication.

chemistry, physical,physics, atomic, molecular & chemical
High-Q All-Dielectric Metasurface: Super and Suppressed Optical Absorption

Jingyi Tian,Qiang Li,Pavel A. Belov,Ravindra Kumar Sinha,Weiping Qian,Min Qiu

DOI: https://doi.org/10.1021/acsphotonics.0c00003

IF: 7

2020-01-01

ACS Photonics

Abstract:All-dielectric metasurface absorbers are good candidates for realizing near-unity light absorption within subwavelength-thin nanostructures. However, only moderate quality factor (Q-factor, e.g., Q similar to 10) all-dielectric metasurface absorbers have been demonstrated due to high radiative loss of the supported Mie resonances. Here, we theoretically propose a high-Q crystalline silicon metasurface superabsorber with near-unity absorption in the near-infrared region by utilizing the dipole quasi bound states in the continuum (quasi-BIC) resonances with engineered radiative loss. The designed all-dielectric metasurface superabsorber shows high-Q (similar to 640) near-unity absorption in the near-infrared region. Moreover, when the superstrate refractive index is different from that of the substrate, the anticrossing behavior of the induced dipole quasi-BIC resonances can be observed in the absorption spectra. This design applies to arbitrary high-refractive-index low-loss materials at various working bands, enabling practical applications of high-Q all-dielectric ultrathin superabsorbers in optical sensing, optical filtering, and photon detection.
Metasurface-tuned Light-Matter Interactions for High-Performance Photodetectors

Guanyu Zhang,Chang Xu,Dong Sun,Qinsheng Wang,Guowei Lu,Qihuang Gong

DOI: https://doi.org/10.1016/j.fmre.2024.01.002

2024-01-01

Fundamental Research

Abstract:Photodetection, the conversion of optical signals to electrical signals, plays a pivotal role in optical communication, sensing, and computing. However, with the advent of novel applications such as quantum computing, intelligent driving, high-speed communication, and augmented reality, traditional photodetectors encounter challenges associated with miniaturization, the assurance of high performance, and the need for multifunctionality. These demands have prompted the development of novel photodetectors. One particularly promising avenue involves integrating conventional photodetection with metasurfaces. Metasurfaces facilitate highly localized field manipulation and versatile modes control at the subwavelength scale via plasmon resonance or Mie scattering, thereby enabling superior performance and multifunctionality detection. Consequently, metasurface-enhanced photodetectors have garnered significant attention in recent years. This review provides an overview of the unique roles played by metasurfaces in photodetection and summarizes notable breakthroughs in recent years.
Factors predisposing to perinatal death related to uterine rupture during attempted vaginal birth after caesarean section: retrospective cohort study

Gordon C. S. Smith,J. Pell,D. Pasupathy,R. Dobbie

DOI: https://doi.org/10.1136/bmj.38160.634352.55

2004-07-19

British Medical Journal

Abstract:Abstract Objective To determine the factors associated with an increased risk of perinatal death related to uterine rupture during attempted vaginal birth after caesarean section. Design Population based retrospective cohort study. Setting Data from the linked Scottish Morbidity Record and Stillbirth and Infant Death Survey of births in Scotland, 1985-98. Participants All women with one previous caesarean delivery who gave birth to a singleton infant at term by a means other than planned repeat caesarean section (n = 35 854). Main outcome measures All intrapartum uterine rupture and uterine rupture resulting in perinatal death (that is, death of the fetus or neonate). Results The overall proportion of vaginal births was 74.2% and of uterine rupture was 0.35%. The risk of intrapartum uterine rupture was higher among women who had not previously given birth vaginally (adjusted odds ratio 2.5, 95% confidence interval 1.6 to 3.9, P < 0.001) and those whose labour was induced with prostaglandin (2.9, 2.0 to 4.3, P < 0.001). Both factors were also associated with an increased risk of perinatal death due to uterine rupture. Delivery in a hospital with < 3000 births a year did not increase the overall risk of uterine rupture (1.1, 0.8 to 1.5, P = 0.67). However, the risk of perinatal death due to uterine rupture was significantly higher in hospitals with < 3000 births a year (one per 1300 births) than in hospitals with ≥ 3000 births a year (one per 4700; 3.4, 1.0 to 14.3, P = 0.04). Conclusion Women who have not previously given birth vaginally and those whose labour is induced with prostaglandin are at increased risk of uterine rupture when attempting vaginal birth after caesarean section. The risk of consequent death of the infant is higher in units with lower annual numbers of births.
High-Efficiency, All-Dielectric Metasurfaces Down to the Deep Ultraviolet

Cheng Zhang,Shawn Divitt,Qingbin Fan,Wenqi Zhu,Amit Agrawal,Ting Xu,Henri J. Lezec

DOI: https://doi.org/10.1109/cleoe-eqec.2019.8872530

2019-01-01

Abstract:In recent years, researchers have demonstrated various types of high-performance, all-dielectric metasurfaces operating in the infrared (IR) and visible regimes, paving the way towards high-efficiency, multi-functional and compact photonic systems. However, there has been a conspicuous lack of research on metasurfaces designed for operation in the ultraviolet (UV) region, which is the spectral region hosting various important applications such as photolithography, spectroscopy, astronomy, medical therapy, and high-resolution imaging. Unfortunately, direct scaling of the operation frequencies of metasurfaces based on the IR and visible designs down to the UV is challenging, due to the prohibitively high optical loss of typically employed constituent materials (e.g., Si, TiO 2 , GaN).
Performance of Metal-Semiconductor-Metal Structured Diamond Deep-Ultraviolet Photodetector with a Large Active Area

Mengyang Feng,Peng Jin,Xianquan Meng,Pengfei Xu,Xiaodi Huo,Guangdi Zhou,Pengfei Qu,Ju Wu,Zhanguo Wang

DOI: https://doi.org/10.1088/1361-6463/ac83ce

2022-07-26

Abstract:In this work, the uniformity is significantly improved of the photoresist film spinning-coated on the small-size diamond wafer by inlaying the diamond wafer into a 1-inch polytetrafluoroethylene substrate; consequently, the utilizable surface area of the diamond wafer is remarkably increased. As a result, the interdigital electrodes of 2.5 mm × 2.5 mm in dimension are prepared on the single crystal diamond (5 mm × 5 mm × 0.5 mm) and a metal-semiconductor-metal structured diamond deep-ultraviolet photodetector with a large active area of 3.093 mm 2 has been fabricated. Compared to the maximum values of the interdigital-typed intrinsic diamond deep-ultraviolet photodetectors, the active area is increased by more than six times, and the photocurrent reaches the order of milliampere, which is about two orders of magnitude larger. Meanwhile, the responsivity and external quantum efficiency are 56.3 A/W and 328, respectively, at 50 V bias under 3.125 μW/mm2 213-nm illumination, and the corresponding mobility-lifetime product of the diamond wafer is 1.11×10 -5 cm 2 /V. As the voltage continued to increase, which still maintained an upward trend and did not appear saturated; the corresponding responsivity is up to 275.9 A/W at 120 V. In addition, the ultraviolet-visible light discrimination ratio is 1.4×10 4 at 10 V, and the carrier transit time between interdigital electrodes is measured to be only about 1 ns (excited by a 213-nm pulse laser), which shows that the photodetector has an ultrafast response speed.
A synergetic enhancement strategy of light utilization and carrier transfer for UV photodetection associated with artificial resonance nano-cavities

Zhenpeng Cheng,Zeping Li,Ming-Yu Li,Xiaoyan Wen,Xumin Ding,Hao Xu,Jihoon Lee,Haifei Lu,Sisi Liu

DOI: https://doi.org/10.1039/d3ta06308a

IF: 11.9

2023-12-19

Journal of Materials Chemistry A

Abstract:Low-dimensional wide bandgap semiconductors demonstrate great potential in the large-scale fabrication of new-generation ultraviolet (UV) photodetectors (PDs) with an excellent combination of the integration level and easily tunable response spectra. However, the thickness dependence on the defect density and light absorption negatively affects the carrier photogeneration and transportation in photoactive layers, hindering the simultaneous realization of high sensitivity and low noise during detection. Herein, artificial resonance nano-cavities of 0D/2D ZnO quantum dot (QD)/MXene nanosheet (NS) composite thin films on a distributed Bragg reflector (DBR) are proposed toward high-performance UV photodetection. The uniformly distributed MXene NSs can concentrate incident photons within the composite thin films via boosted near-surface electromagnetic fields, and the extraction and transfer processes of photoinduced carriers are subsequently accelerated as experimentally and theoretically evidenced. The spatial light coupling between MXene NSs and the DBR with well-balanced periods of two dielectric layers further compensates for the unfavorable light–matter interaction within the 0D/2D composite thin films induced by the noticeable light transmission, and the comprehensive enhancement in the whole photocurrent generation procedure instantaneously endows the device with outstanding EQE (489.1%) and D * (1.7 × 10 13 jones), which opens a practicable route for the fabrication of UV photodetectors with exceptional optoelectronic response and long-term stability.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Ultraviolet metasurface based on highly scattering silicon antennas (Conference Presentation)

Yang Deng,Xi Wang,Zilun Gong,Kaichen Dong,Shuai Lou,Nicolas C. Pégard,Kyle B. Tom,Fuyi Yang,Laura Waller,Zheng You,Jie Yao

DOI: https://doi.org/10.1117/12.2508169

2019-01-01

Abstract:With signatures of high photon energy and short wavelength, ultraviolet (UV) light enables numerous applications such as high-resolution imaging, photolithography and sensing. In order to manipulate UV light, bulky optics are usually required and thereby do not meet the fast-growing requirements of integration in compact systems. Recently, metasurfaces, with subwavelength or wavelength thicknesses, have shown unprecedented control of light, enabling substantial miniaturization of photonic devices from Terahertz to visible regions. However, material limitations and fabrication challenges have hampered the realization of such functionalities at shorter wavelengths. Herein, we theoretically and experimentally demonstrate that metasurfaces, made of highly scattering silicon (Si) antennas, can be designed and fabricated to manipulate broadband UV light. The metasurface thickness is only one-tenth of the working wavelength, resulting in very small height-to-width aspect ratio (~ 1). Peak conversion efficiency reaches 15% and diffraction efficiency is up to 30%, which are comparable to plasmonic metasurface performances in infrared (IR). A double bar structure is proposed to further improve the metasurface’s diffraction efficiency to close to 100% in transmission mode over a broad UV band. Moreover, for the first time, we show photolithography enabled by metasurface-generated UV holograms. We attribute such performance enhancement to the high scattering cross-sections of Si antennas in the UV range, which is adequately modeled via a circuit. Our new platform will deepen our understanding of light-matter interactions and introduce even more material options to broadband metaphotonic applications, including those in integrated photonics and holographic lithography technologies.
High-performance all-dielectric ultraviolet metasurfaces (Conference Presentation)

Cheng Zhang,Shawn Divitt,Qingbin Fan,Wenqi Zhu,Amit Agrawal,Ting Xu,Henri J. Lezec

DOI: https://doi.org/10.1117/12.2508827

2019-01-01

Abstract:Recent years have witnessed the rapid development of flat optical elements (i.e., metasurfaces). With properly designed and arranged sub-wavelength structures over its plane, a metasurface is able to impart arbitrary, spatially variant amplitude, phase and polarization modulations on an incident electromagnetic wave. This highly customizable nature allows metasurface to simultaneously accomplish a variety of functions that have traditionally been fulfilled by a combination of different optics, such as gratings, lenses, beam splitters, and hologram plates, with a significantly reduced physical thickness compared to traditional optical elements. Researchers have demonstrated various high-performance metasurfaces operating in the infrared (IR) and visible regime. However, there has been a conspicuous lack of work in the ultraviolet (UV) region, which is a spectral range hosting important applications such as photolithography, DNA sequencing, sterilization, and medical imaging. Unfortunately, direct translation to the UV regime of implementation strategies for IR and visible-frequency metasurfaces will not work, so new constituent materials and designs need to be developed. Here, we report on high-efficiency, all-dielectric metasurfaces operating in the UV regime. The metasurfaces utilize wide bandgap (> 5.5 eV) dielectric materials, enabling the devices to operate over a broad-band UV range. We demonstrate metasurfaces working at three UV wavelengths (364, 325 and 266 nm), including hologram, lens, and self-accelerating beam devices. To further show the versatility of our design, we demonstrate metasurfaces producing spin-multiplexed holograms and self-accelerating beams at 364 nm, with operational efficiencies larger than 50%. Our work opens the door for high-performance and multi-functional UV flat optical elements.
Proton pump and membrane potential in liver mitochondria.

G. Azzone,T. Pozzan,M. Bragadin

DOI: https://doi.org/10.1042/BST0050487

1977-04-01

Biochemical Society Transactions

Abstract:Hellingwerf, K. J., Arents, J. C. & van Dam, K. (1976) FEBS Lett. 67, 146-148 Klingenberg, M. (1972) in Mitochondria, Biogenesis and Bioenergetics v a n den Berg, S. G., Borst, P., van Deenen, L. L. M., Riemersma, J. C., Slater, E. C. & Tager, J. M., eds.), pp. 147-162, North-Holland, Amsterdam Mitchell, P. (1961) Nature (London) 191, 144 Nicholls, D. G. (1974) Eur. J. Biochern. 50, 305-315 Oesterhelt, D. & Stoeckenius, W. (1973) Proc. Natl. Acud. Sci. U.S.A. 70,2853-2857 Padan, E. & Rottenberg, H. (1973) Eur. J. Biochem. 40,431-436 Rosing, J. & Slater, E. C. (1972) Biochim. Biophys. Acta 267, 275-290 Wiechmann, A. H. C. A., Beem, E. P. & van Dam, K. (1975) in Electron-Transfer Chains and Oxidative Phosphorylution (Quagliariello, E., Papa, S., Palmieri, F., Slater, E. C. & Siliprandi, N., eds.), pp. 335-342, North-Holland, Amsterdam
An Ultra-wide-angle Metasurface Absorber Operating in the Ultraviolet to Visible Range

Tong Li,Chengqing Bao,Pan Huang,Qian He,Guofeng Song

DOI: https://doi.org/10.1016/j.optcom.2024.130811

IF: 2.4

2024-06-22

Optics Communications

Abstract:Here, we propose an ultra-wide-angle metasurface absorber. It consists of a one-dimensional titanium grating periodic array with dislocation distribution. The average absorptivity of the absorber exceeds 94% in the ultraviolet to visible light band (200–760 nm) under normal TM-polarized incident wave. This benefits from the coupling of propagating surface plasmon resonance, local surface plasmon resonance, and hybrid mode resonance. For normal TE-polarized incident wave, the absorber achieves perfect narrowband absorption (>99.22%) in the ultraviolet light region because of the excitation of cavity-mode resonance. The absorber exhibits broadband absorption with an average absorptivity exceeding 85% in the visible light band because of the excitation of slot mode. These excellent absorption properties are well retained at 70° oblique incidence. The structural symmetry of the absorber dramatically expands the flexibility of device applications. It can achieve great absorption performance in an ultra-wide-angle range of 280° along the incident light direction. In addition, the absorber is sensitive to the polarization angle and incident angle of ultraviolet light, which can be used for ultraviolet detection and sensing. The proposed ultra-wide-angle metasurface absorber has potential application in the field of optical communication, photoelectric detection, and solar energy harvesting.

optics
All‐Silicon Broadband Ultraviolet Metasurfaces

Yang Deng,Xi Wang,Zilun Gong,Kaichen Dong,Shuai Lou,Nicolas Pegard,Kyle B. Tom,Fuyi Yang,Zheng You,Laura Waller,Jie Yao

DOI: https://doi.org/10.1002/adma.201802632

IF: 29.4

2018-01-01

Advanced Materials

Abstract:Featuring high photon energy and short wavelength, ultraviolet (UV) light enables numerous applications such as high‐resolution imaging, photolithography, and sensing. In order to manipulate UV light, bulky optics are usually required, and hence do not meet the fast‐growing requirements of integration in compact systems. Recently, metasurfaces have shown unprecedented control of light, enabling substantial miniaturization of photonic devices from terahertz to visible regions. However, material challenges have hampered the realization of such functionalities at shorter wavelengths. Herein, it is experimentally demonstrated that all‐silicon (Si) metasurfaces with thicknesses of only one‐tenth of the working wavelength can be designed and fabricated to manipulate broadband UV light with efficiencies comparable to plasmonic metasurface performance in infrared (IR). Also, for the first time, photolithography enabled by metasurface‐generated UV holograms is shown. Such performance enhancement is attributed to increased scattering cross sections of Si antennas in the UV range, which is adequately modeled via a circuit. The new platform introduced here will deepen the understanding of light–matter interactions and introduce even more material options to broadband metaphotonic applications, including those in integrated photonics and holographic lithography technologies.
A wide ultraviolet spectra response photodetector based on epitaxial growth of highly-oriented ε-Ga2O3 crystal on diamond substrate

Qilong Yuan,Wei Wang,Wenrui Zhang,Mengting Qiu,Mingyang Yang,Zhenglin Jia,Bo Wang,Cheng-Te Lin,Kazhihito Nishimura,Keke Chang,Kuan W. A. Chee,Junfeng Cui,Nan Jiang,Qilong YuanWei WangWenrui ZhangMengting QiuMingyang YangZhenglin JiaBo WangCheng-Te LinKazhihito NishimuraKeke ChangKuan W. A. CheeJunfeng CuiNan Jianga Key Laboratory of Marine Materials and Related Technologies,Zhejiang Key Laboratory of Marine Materials and Protective Technologies,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo,PR Chinab Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo,PR Chinac Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing,PR Chinad Chair of Functional Materials,Department of Materials Science & Engineering,Saarland University,Saarbrücken,Germanye Hefei National Laboratory for Physical Sciences at Microscale,University of Science and Technology of China,Hefei,PR China

DOI: https://doi.org/10.1080/26941112.2023.2256360

2023-10-03

Functional Diamond

Abstract:In recent years, diamond has shown great potential in solar-blind ultraviolet (UV) photodetection due to its ultrawide bandgap (∼ 5.5 eV) and other superior semiconductor properties. However, the response region of diamond photodetector is usually smaller than 230 nm, which cannot cover the whole solar-blind region from 200 to 280 nm. In this work, an ε-Ga 2 O 3 /diamond photodetector with wide spectra responsivity from 210 (or even lower) to 260 nm was fabricated. High-quality ε-Ga 2 O 3 film with columnar crystal was epitaxially grown on single crystalline CVD diamond substrate by pulse laser deposition (PLD). TEM characterization revealed that the ε-Ga 2 O 3 film grew along the orientation on diamond (100) substrate. The deep ultraviolet (DUV) photodetector based on the ε-Ga 2 O 3 /diamond structure showed a high light-to-dark ratio over 5.7 × 10 4 and good linear response to the incident light power density from 10 to 400 mW/cm 2 . Moreover, compared to other photodetectors, the fabricated ε-Ga 2 O 3 /diamond photodetector achieved high responsivity and wide spectra response region from 210 to 260 nm, with high solar-blind rejection ratio of 104 ( R 240 / R 280 ) and 165 ( R 210 / R 280 ), respectively. The extension of spectra region with high responsivity of the ε-Ga 2 O 3 /diamond photodetector can be attributed to the thin thickness of ε-Ga 2 O 3 film (around 200 nm) and parts of the DUV light were absorbed by diamond. The high responsivity and wide spectra response region indicate the fabricated ε-Ga 2 O 3 /diamond photodetector can be used for the detection of ultraviolet in the most of the DUV region.

Editorial: Preventive medicine, an integral component of cancer centers.

Omnidirectional, Thin Metasurface Exhibiting Selective Absorption for Un-Polarized Broadband Incidence

Ultrahigh Sensitivity Solar‐Blind UV Detection via Multistage‐Concentric‐Annulus Architecture Metasurface

Detector of UV light chirality based on a diamond metasurface

Super Absorbing Ultraviolet Metasurface

All-Dielectric Metasurfaces: Near-Infrared Super-Absorbing All-Dielectric Metasurface Based on Single-Layer Germanium Nanostructures (Laser Photonics Rev. 12(9)/2018)

Near‐Infrared Super‐Absorbing All‐Dielectric Metasurface Based on Single‐Layer Germanium Nanostructures

Conceptual development and characterization of a diamond-based ultraviolet detector

Multi-band optical resonance of all dielectric metasurfaces toward high-performance ultraviolet sensing

High-Q All-Dielectric Metasurface: Super and Suppressed Optical Absorption

Metasurface-tuned Light-Matter Interactions for High-Performance Photodetectors

Factors predisposing to perinatal death related to uterine rupture during attempted vaginal birth after caesarean section: retrospective cohort study

High-Efficiency, All-Dielectric Metasurfaces Down to the Deep Ultraviolet

Performance of Metal-Semiconductor-Metal Structured Diamond Deep-Ultraviolet Photodetector with a Large Active Area

A synergetic enhancement strategy of light utilization and carrier transfer for UV photodetection associated with artificial resonance nano-cavities

Ultraviolet metasurface based on highly scattering silicon antennas (Conference Presentation)

High-performance all-dielectric ultraviolet metasurfaces (Conference Presentation)

Proton pump and membrane potential in liver mitochondria.

An Ultra-wide-angle Metasurface Absorber Operating in the Ultraviolet to Visible Range

All‐Silicon Broadband Ultraviolet Metasurfaces

A wide ultraviolet spectra response photodetector based on epitaxial growth of highly-oriented ε-Ga2O3 crystal on diamond substrate