Heat transport characteristics of gallium nitride/graphene/silicon carbide heterointerface Molecular dynamics studies
Dong-Jing Liu,Fu Zhou,Shuai-Yang Chen,Zhi-Liang Hu,Liu Dong-Jing,ZhouFu,ChenShuai-Yang,HuZhi-Liang,
DOI: https://doi.org/10.7498/aps.72.20230537
IF: 0.906
2023-01-01
Acta Physica Sinica
Abstract:In order to study the thermal transport characteristics of the heterogeneous gallium nitride/graphene/silicon carbide interface, the effects of temperature, size and vacancy defects on the thermal conductance of the interface were investigated by non-equilibrium molecular dynamics method, and the changes of phonon state density and phonon participation rate on the thermal conductance of the interface were further analysed. The results show that the thermal conductance of the interface increases with increasing temperature. The analysis shows that with the increase of temperature, the lattice vibration intensities, the density of low frequency phonon states and the number of phonons involved in heat transport increase. The change of thermal conductance at the interface of single-layer graphene is higher than that of multi-layer graphene. When the structural size of the heat transport direction is changed, and the number of layers of gallium nitride and silicon carbide is changed at the same time, the thermal conductance at the interface does not change significantly, and the phonon scattering of the thermal transport at the interface is almost unaffected. However, as the number of graphene interlayers increases from the first layer to the fifth layer, the interface thermal conductance first decreases and then slowly increases. Because of the fourth layer, the participation rate of low frequency phonons decreases, more phonons are localised, and the number of phonons not involved in heat transfer increases, the interfacial thermal conductance reaches the minimum value of 0.024GW/m 2 K. As the vacancy defect concentration increases, the interfacial thermal conductance first increases gradually and then decreases.The difference is that when the concentration of single vacancy defects is 10%, the interface thermal conductance reaches the maximum value of 0.063GW/m 2 K. When the concentration of double vacancy defects is 12%, the interfacial thermal conductance reaches the maximum value of 0.065GW/m 2 K. The analysis shows that more phonons enter the delocalisation from the local region and more phonons participate in the heat transfer, leading to the increase of the interface thermal conductance. The results are useful for tuning the thermal transport performance of GaN devices and provide a theoretical basis for the design of devices with heterogeneous interfaces.
physics, multidisciplinary