The application of silicon dioxide as an electret material

A. Sprenkels,W. Olthuis,P. Berveld
DOI: https://doi.org/10.1109/ISE.1988.38543
1988-09-01
Abstract:The authors have investigated silicon dioxide for its electret properties. It appears that thermally grown silicon dioxide has a large lateral surface conductivity, resulting in poor electret behavior. This can be adequately reduced by chemical surface modification, resulting in an excellent silicon dioxide electret. Experiments have shown that corona-charged SiO/sub 2/ layers are much more resistant to high temperatures than Teflon-FEP electrets. A 1.1- mu m-thick SiO/sub 2/ layer, charged up to 150 V, yields a time constant of the charge decay in excess of 400 yr at ambient laboratory conditions.<<ETX>>
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