Abstract:The Hall effect has been a fascinating topic ever since its discovery, resulting in exploration of entire family of this intriguing phenomena. As the field of topology develops and novel materials emerge endlessly over the past few decades, researchers have been passionately debating the origins of various Hall effects. Differentiating between the ordinary Hall effect and extraordinary transport properties, like the anomalous Hall effect, can be quite challenging, especially in high-conductivity materials, including those with topological origins. In this study, we conduct a systematic and comprehensive analysis of Hall effects by combining the semiclassical Boltzmann transport theory with first principles calculations within the relaxation time approximation. We first highlight some striking similarities between the ordinary Hall effect and certain anomalous Hall effects, such as nonlinear dependency on magnetic field and potential sign reversal of the Hall resistivity. We then demonstrate that the Hall resistivity can be scaled with temperature and magnetic field as well, analogue to the Kohler's rule which scales the longitudinal resistivity under the relaxation time approximation. We then apply this Kohler's rule for Hall resistivity to two representative materials: ZrSiS and PtTe$_2$ with reasonable agreement with experimental measurement. Moreover, our methodology has been proven to be applicable to the planar Hall effects of bismuth, of perfect agreements with experimental observations. Our research on the scaling behavior of Hall resistivity addresses a significant gap in this field and provides a comprehensive framework for a deeper understanding of the Hall resistance family, and thus has potential to propel the field forward and spark further investigations into the fascinating world of Hall effects.

First principles methodology for studying magnetotransport in narrow gap semiconductors with ZrTe 5 example

First-principles methodology for studying magnetotransport in narrow-gap semiconductors: an application to Zirconium Pentatelluride ZrTe5

First-principles Methodology for studying magnetotransport in magnetic materials

New perspectives of Hall effects from first-principles calculations

Magnetotransport due to conductivity fluctuations in non-magnetic ZrTe2 nanoplates

Gate-tunable multiband transport in ZrTe5 thin devices

Crossover Behavior in the Magnetoresistance of Thin Flakes of the Topological Material ZrTe5

Quantum oscillations and three-dimensional quantum Hall effect in ZrTe$_5$

Anomalous Magnetothermoelectric Behavior in Massive Dirac Materials

Nonlinear transport due to magnetic-field-induced flat bands in the nodal-line semimetal ZrTe5

Lifshitz transition mediated electronic transport anomaly in bulk ZrTe5

Perpendicular in-plane negative magnetoresistance in ZrTe5

Electron-electron Interactions and Weak Antilocalization in Few-Layer ZrTe5 Devices

Temperature-dependent Collective Excitations in the Three-Dimensional Dirac System ZrTe5

Magnetotransport in semiconductors and two-dimensional materials from first principles

Temperature-Dependent Collective Excitations in a Three-Dimensional Dirac System ZrTe$_{5}$

Negative longitudinal magnetothermopower in the topological semimetal ZrTe 5

Magneto-transport Evidence for Strong Topological Insulator Phase in ZrTe5

Unreliability of Two-Band Model Analysis of Magnetoresistivities in Unveiling Temperature-Driven Lifshitz Transition

Gate-Tunable Multiband Transport in ZrTe 5 Thin Devices

Electron-electron interactions and weak antilocalization in few-layer Zr Te 5 devices