Device Characteristics of AlGaN/GaN MOS-HEMTs Using High- $k$ Praseodymium Oxide Layer

H. Chiu,Chih-Wei Yang,Yung-Hsiang Lin,R. Lin,Liann-Be Chang,K. Horng
DOI: https://doi.org/10.1109/TED.2008.2004851
IF: 3.1
2008-11-01
IEEE Transactions on Electron Devices
Abstract:In this brief, AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using an electron-beam-evaporated praseodymium oxide layer (Pr<sub>2</sub>O<sub>3</sub>) in a high-oxygen-flow environment during the gate-dielectric-layer formation was studied. By adjusting the oxygen flow rate in an electron-beam evaporator chamber, the highest Pr content in Pr<sub>2</sub>O<sub>3</sub> occurred at 15 sccm. Moreover, the Pr<sub>2</sub>O<sub>3</sub> thin film also achieved a good thermal stability after 400-degC, 600-degC, and 800-degC postdeposition annealing due to its high-binding-energy (933.2 eV) characteristics. The gate leakage current can be improved significantly by inserting this high- <i>k</i> dielectric layer, and meanwhile, the power-added efficiency can be enhanced up to 5%. Experimental results have also shown that Pr<sub>2</sub>O<sub>3</sub> MOS-HEMTs outperformed the standard GaN HEMTs in output power density and in pulsed-mode operation. These high-performance electron-beam-evaporated Pr<sub>2</sub>O<sub>3</sub> high-<i>k</i> AlGaN/GaN MOS-HEMTs are suitable for high-volume production due to its <i>in</i> <i>situ</i> insulator and metal-gate deposition in the same chamber.
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