Single-crystalline Silicon on Quartz (SOQ) Wafer by Ultra-low Temperature (100 C) Wafer Bonding and Thinning Approaches

C. Chang,C. Peng,Guangxi Lu,Tzer-Sheng Lin
DOI: https://doi.org/10.6180/JASE.2005.8.3.05
2005-09-01
Abstract:Single-crystalline silicon films have been prepared on synthetic quartz (fused quartz or quartz glass) substrates by ultra-low temperature wafer bonding and thinning approaches. The wafer surfaces treated only by RCA1 process showed a relative low initial bonding energy of 0.17 J/m 2 . Though the bonding strength can be raised to 14 J/m 2 after 350 C annealing for 4 h, the severe warpage of bonded wafer led to the poor total thickness variation (TTV) of SOQ wafers (TTV > 10 m) after thinning. However, if the wafer surfaces treated with RCA1 process, and followed by O2 plasma treatment for 15 sec, the initial bonding energy can be raised to 0.83 J/m 2 . After the bonded wafer annealed at 100C for 16 hrs, the bonding strength increased rapidly to 13.3 J/m 2 with still a low warpage of 2.5 m. The SOQ wafers fabricated by the ultra-low temperature bonding, lapping and polishing showed relative good TTV of less than 4 m.
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