RF front-end of direct conversion receiver RFIC for cdma-2000

M. Hafizi,S. Feng,T. Fu,Kim Schulze,R. Ruth,R. Schwab,P. Karlsen,David Simmonds,Q. Gu
DOI: https://doi.org/10.1109/JSSC.2004.833551
IF: 5.4
2004-09-27
IEEE Journal of Solid-State Circuits
Abstract:We report on the front-end of a highly integrated dual-band direct-conversion receiver IC for cdma-2000 mobile handset applications. The RF front-end included a CELL-band low-noise amplifier (LNA), dual-band direct-conversion quadrature I/Q down-converters, and a local-oscillator (LO) signal generation circuit. At 2.7 V, the LNA had a noise figure of 1.2 dB and input third-order intermodulation product (IIP3) of 9 dBm. I/Q down-converters had a noise figure of 4-5 dB and IIP3 of 4-5 dBm and IIP2 of 55 dBm. An on-chip phase-locked loop and external voltage-controlled oscillator generated the LO signal. The receiver RFIC was implemented in a 0.35-/spl mu/m SiGe BiCMOS process and meets or exceeds all cdma-2000 requirements when tested individually or on a handset.
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