Abstract:Interface impedes heat flow in heterostructures and the interfacial thermal resistance (ITR) has become a critical issue for thermal dissipation in electronic devices. To explore the mechanism leading to the ITR, in this work, the dynamic behaviors of phonons passing through the GaN/AlN interface with an amorphous interlayer is investigated by using phonon wave packet simulation. It is found the amorphous interlayer significantly impedes phonon transport across the interface, and leads to remarkable phonon mode conversions, such as LA$\rightarrow$TA, TA$\rightarrow$LA, and LA$\rightarrow$TO conversion. However, due to mode conversion and inelastic scattering, we found a portion of high-frequency TA phonons, which are higher than the cut-off frequency and cannot transmit across the ideal sharp interface, can partially transmit across the amorphous interlayer, which introduces additional thermal transport channels through the interface and has positive effect on interfacial thermal conductance. According to phonon transmission coefficient, it is found the ITR increases with increasing of amorphous interlayer thickness L. The phonon transmission coefficient exhibits an obvious oscillation behavior, which is attributed to the multiple phonon scattering in the amorphous interlayer, and the oscillation period is further revealed to be consistent with the theoretical prediction by the two-beam interference equation. In addition, obvious phonon frequency shifts and phonon energy localization phenomena were observed in the amorphous interlayer. Finally, to improve phonon transmission, the interface morphology was further optimized via the annealing reconstruction technique, which results in re-crystallization of the amorphous interlayer and the decrease of ITR by ~21% as L=2 nm.

Phonon transition across an isotopic interface

Atomically localized ingredient-dependent interface phonon in heterogeneous solids

Control of the phonon band gap with isotopes in hexagonal boron nitride

Measuring phonon dispersion at an interface

Atomic-Scale Probing of Heterointerface Phonon Bridges in Nitride Semiconductor

Effects of Localized Interface Phonons on Heat Conductivity in Ingredient Heterogeneous Solids

Remarkable Reduction of Interfacial Thermal Resistance in Nanophononic Heterostructures

Phonon Assisted Intersubband Transitions in Step Quantum Well Structures

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Isotope engineering of carrier mobility via Fröhlich electron-phonon interaction

Engineering Acoustic Phonons and Electron-Phonon Coupling by the Nanoscale Interface

Interaction Between an Electron and Optical Phonons in Polar Semiconductor Heterostructures

Inelastic Phonon Transport Across Atomically Sharp Metal/semiconductor Interfaces

Phonon dynamic behaviors induced by amorphous interlayer at heterointerfaces

Subdiffusive and superdiffusive phonon transport induced significant thermal rectification across a one-dimensional Kapitza interface

Atomic-scale mechanism of enhanced electron-phonon coupling at the interface of MgB$_2$ thin film

Atomic-scale measurement of localized dislocation phonons at Si/Ge interface

Atomic-scale tunable phonon transport at tailored grain boundaries

Phonon Chirality Tuned Through Interface Transmission in a One-Dimensional Atomic Junction Model

Phonon Transport at the Interfaces of Vertically Stacked Graphene and Hexagonal Boron Nitride Heterostructures

Phonon Transport in Two-Dimensional Carbon-Boron Material and Heterointerfaces