Wafer-scale Graphene Synthesized by Chemical Vapor Deposition at Ambient Pressure

H. Cao,Qingkai Yu,L. Jauregui,Jifa Tian,Wei Wu,Zhihong Liu,R. Jalilian,Daniel K. Benjamin,Zhigang Jiang,J. Bao,S. Pei,Yong P. Chen
2009-10-22
Abstract:We report wafer-scale graphene synthesized by chemical vapor deposition (CVD) on copper foils at ambient pressure. Graphene films up to 4 inches in size are synthesized and transferred to SiO2/Si. Spectroscopic Raman mapping demonstrates that the synthesized films consist primarily of monolayer graphene (with as high as ~90% area coverage). Low temperature transport measurements are performed on devices made from such CVD graphene. We observe ambipolar field effect (with on/off ratio ~5 and carrier mobilities up to ~3000 cm/Vs) and the hall-mark “half-integer” quantum Hall effect. We also observe weak localization of carriers and extract phase coherence length up to 0.3 μm.
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