GaAs MESFET's with partial p-type drain regions

C. Lee,B. Welch
DOI: https://doi.org/10.1109/EDL.1982.25537
IF: 4.8157
1982-07-01
IEEE Electron Device Letters
Abstract:The use of a localized p-type region in the drain of a GaAs MESFET has been studied. Holes injected from this p-region compensate the negative space charge region at the channel-substrate interface, minimizing undesirable substrate effects. The MESFET's fabricated with p-type drain regions (called p-FET's) exhibited I-V characteristics with less hysteresis and low light sensitivity compared to standard n-type drain MESFET's. Also, less backgating effect has been observed in these p-FET's than in standard MESFET's.
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