Abstract:Piezoelectricity is a well-known effect in a vast number of technologically important insulators and semiconductors and exists in out of the three-dimensional crystal classes. The piezoelectric effect is the driving mechanism behind several classical sensors and transmitters, and also most recently, in many nanodevices. Zhong Lin Wang coined the fields piezotronics and piezo-phototronics where the piezoelectric effect plays a dominant role. Piezoelectricity couples in a linear fashion mechanical strain to electrical fields and vice versa. In solids, there is another linear coupling between strain and the electric potential, known as the deformation potential effect. While linear in its coupling nature, this effect does not require the solid to be non-centrosymmetric in contrast to the piezoelectric effect. Moreover, the deformation potential effect is quantitatively huge and leads to changes in the conduction and valence band edges of III-V and II-VI materials of, typically, ~meV in the presence of ~\% strain. Therefore, the deformation potential effect is essential to determine the electronic and photonic properties of bulk and nanostructure semiconductors in the presence of strain. In this work, we compute the relative importance of piezoelectricity and the deformation potential effect in the presence of lattice mismatch and external strain. We choose junctions of ZnO/GaN structures but anticipate that the general conclusions can be carried over to other material structures. The main result of the present work is that both the inclusion of the deformation potential effect and piezoelectricity is crucial to correctly compute the effect of strain on junction current-voltage curves and photonic properties. In our analysis of wurtzite heterostructures, the spontaneous polarization effect is also included but this effect appears to play a minor role for electronic and photonic properties.

Piezo-phototronic spin laser based on wurtzite quantum wells

Features Of The Piezo-Phototronic Effect On Optoelectronic Devices Based On Wurtzite Semiconductor Nanowires

Progress in Piezo-Phototronic-Effect-Enhanced Light-Emitting Diodes and Pressure Imaging

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Piezoelectric manipulation of spin–orbit coupling in a Wurtzite heterostructure

Dynamic piezo-phototronic effect in InGaN/GaN multiple quantum wells

High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Piezo-phototronic intersubband terahertz devices based on layer-dependent van der Waals quantum well

Polarization-driven High Rabi Frequency of Piezotronic Valley Transistors

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers

Exciton States in Wurtzite Ingan Strained Coupled Quantum Dots: Effects of Piezoelectricity and Spontaneous Polarization

Strain and Piezoelectric Control of Electronic and Photonic Properties of p − n Diodes

Strain-assisted Spin Manipulation in a Quantum Well

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature.

Effects of Piezoelectricity and Spontaneous Polarization on Electronic and Optical Properties of Wurtzite III–V Nitride Quantum Wells

Optimized performances in InGaN/GaN quantum-well membrane based vertical optoelectronics by the Piezo-phototronic effect

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

The piezotronic effect on carrier recombination processes in InGaN/GaN multiple quantum wells microwire

Quantum piezotronic devices based on ZnO/CdO quantum well topological insulator

Compressive Strain Induced Enhancement of Transverse-Electric Polarized Ultraviolet Light Emission for AlGaN Quantum Wells