Dual beam lithography (FIB + EBL) for nanometric structures

S. Cabrini,A. Carpentiero,L. Businaro,P. Candeloro,F. Romanato,E. Di Fabrizio

DOI: https://doi.org/10.1109/IMNC.2004.245768

Abstract:Focused Ion Beam Lithography is a very powerful technique for directly writing patterns on many substrates Cl], it is a mask-less and resist-less technique that allows a very wide range of applications, providing a resolution down to 10 nm 121. Joined to the Electron Beam Lithography and the Gas Deposition System it became a very versatile tool for many fabrication processes. Using a dual-beam LEO XI31540 composed by a 30 KeV Gallium ion beam column plus a 30 Kev electron beam GEMINI column, we have fabricated many devices with a resolution down to nanometrk scale, by exploiting FIB Milling (FIBM), FIB Gas Assisted Ecthing (FIBGAE) [3] and E-baem or I-beam Induced Deposition [4]. The machine is powered by ELPHY W I T H lithographic software and pattern generator. We fabricate two dimensional photonic band gap structures (figure 1) on GaAdAlGaAs, Si3N4 and Si/SiOz. The pattem is a periodic lattice (pitch 300 nm) made by circular dots (200 nm diameter, more than 600 nrn deep). We also fabricate the 1D optical wave guide milling down 500 microns long stipe for 1.5 micron deep the slab by FIB and then we put the periodic structure on the path. To avoid the tears effect and the resputtering effect we use the XeF2 gas during the milling (FIBGAE) that produced a volatile compound with the gallium and silicon. To create a small gap for conduction measurements we write a gold pattern by EBL and lift off process and then we cut a narrow line simply by milling by FIB. Some examples of this process are shown in figure 2. Such a narrow gap should be used to contact a single DNA molecule and study its conduction properties. Another application is the realization of 10 nm wires and dots (figure 3) made by Ebeam Induced Deposition. Many applications should be permitted with these patterns; one should be not only the study of conduction of these wires but also the investigation of the limit performances of micro-contact printing lithography. We will describe the experimental details of the process performed by dual beam and the preliminar results of the applications. The distribution of the implanted Gallium ions on the substrate are calculated starting from the result of scattering of ions obtained with Montecarlo simulation program TRIM. [ 11 K. A. Valiev, ”The Physics of Sub-micron Lithography” [2]P.W.H. de Jager, C.W. Hagen and P. Kruit;”The influence of ion beam parameter on pattem resolution”; Microelectronic Engineering 30 ( 1996) 353-356 [3] Klaus Edinger, Thomas Kraus; “Modeling of focused ion beam induced chemistry and comparison with experimental data”; Microelectronic Engineering 57-58 (2001) 263-268 [4] Utke, I.; Dwir, B.; Leifer, K.; Cicoira, F.; Doppelt, P.; H o h a n n , P.; Kapon, E.”Electron beam induced deposition of metallic tips and wires for microelectronics applications”; Microelectronic Engineering Volume: 53, Issue: 1-4, June, 2000, pp. 261-264