Abstract:The atomic configurations and concentrations of intrinsic defects profoundly influence the electrical and optical properties of the semiconductor materials. This influence is particularly significant in the case of β-Ga(2)O(3), which is a highly promising ultrawide bandgap semiconductor characterized by highly complex intrinsic defect configurations. Despite its importance, there is a notable absence of an accurate method to recognize these defects in large-scale atomistic computational...

chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary

A Radial Distribution Function Based Recognition Algorithm of Point Defects in Large-Scale β-Ga 2 O 3 Systems