Mesa-substrate buried heterostructure GaInAsP/InP injection lasers

K. Kishino,Y. Suematsu,Y. Itaya
DOI: https://doi.org/10.1049/EL:19790098
IF: 2.5
1979-02-15
IEEE Journal of Quantum Electronics
Abstract:A new GaInAsP/InP injection laser with buried heterostructure fabricated by single-step epitaxial growth on a mesa substrate is reported. Single longitudinal-mode operation up to 1.4 times the threshold current Ith and linear light-output/current characteristics up to 3Ith are observed at 1.27 ?m.
What problem does this paper attempt to address?