Deep plasma etching process investigation of polyimide materials for forming interlayer connections in microelectronic nodes

D. Vertyanov,S. Timoshenkov,A. Golishnikov,E. Nazarov,M. Putrya,N. Korobova,D. Kostyukov
DOI: https://doi.org/10.1109/ELNANO.2014.6873961
2014-04-15
Abstract:Research results of ion - initiated etching processes of polymer films based on polyimide in oxygen plasma, sulfur hexafluoride and oxygen-argon mixtures of low pressure (around 10-12 Pa) have been shown. Operating modes of deep plasma chemical polyimide etching have been established using IDP TM RHS 100 installation. Optimal values of main technological parameters: etching rate - 0.8 μm/min, sample etching uniformity-not less than 92%; anisotropy - 0.95 have been determined.
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