GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources
Hannes Schürmann,Frank Bertram,Gordon Schmidt,Peter Veit,Olga August,Christoph Berger,Armin Dadgar,André Strittmatter,Julius Kullig,Jan Wiersig,Kang Gao,Mark Holmes,Yasuhiko Arakawa,Jürgen Christen
DOI: https://doi.org/10.1002/pssr.202400188
2024-10-26
physica status solidi (RRL) - Rapid Research Letters
Abstract:The observation of single‐photon emission of self‐organized GaN/AlN quantum dots (QDs) grown on an epitaxial deep‐UV Bragg reflector is followed by completing the resonant cavity and fabricating resonant cavity nanopillars with GaN QDs as gain medium using an optimized process of focused ion beam etching. The GaN QDs still emit at λ = 255 nm under electron beam excitation. Herein, integrating GaN quantum dots (QDs) within a resonant cavity is focused on. Utilizing metal‐organic vapor phase epitaxy, controlled growth of GaN QDs on AlN is achieved. A deep‐UV distributed Bragg reflector (DBR) with high reflectivity in the 250–300 nm range, using AlN and Al0.7Ga0.3N layers to maximize refractive index contrast, is developed. A 50‐period DBR achieves 98% reflectivity at a wavelength of 272 nm. Scanning transmission electron microscopy and electron energy loss spectroscopy analyses reveal a trisection of DBR periods, attributed to a Ga composition pulling effect during growth. The real structure's reflectivity is simulated and matched well with measured data, though actual reflectivity is lower than the ideal. Cathodoluminescence studies at T = 17 K show emission peaks from both the DBR and the GaN QDs. Further, single‐photon emission is demonstrated with a g(2)(t = 0) value of 0.41 at 272.7 nm, confirming the potential for deep‐UV single‐photon sources. Additionally, the creation of a planar resonant cavity with enhanced emission intensity and vertical nanopillar structures with an aspect ratio of 11 and a diameter of 400 nm confirm the successful integration of GaN QDs in advanced UV photonic structures.
physics, condensed matter, applied,materials science, multidisciplinary