DAC-less PAM4 signal generation using a silicon dual-drive push–pull MZI modulator

Kaizhong Chen,Hengsong Yue,Jing Huang,Tao Chu

DOI: https://doi.org/10.1364/ol.521455

IF: 3.6

2024-04-10

Optics Letters

Abstract:Kaizhong Chen, Hengsong Yue, Jing Huang, Tao Chu In this study, we demonstrate DAC-less PAM-4 signal generation by driving a silicon MZI modulator based on a series push–pull ... [Opt. Lett. 49, 2045-2048 (2024)]

optics

What problem does this paper attempt to address?

DAC-less PAM4 Transmitter Using Electro-Optic Polymer Dual-Drive Mach-Zehnder Modulator with Imbalanced Binary Driving Electronics

Guo-Wei Lu,Jianxun Hong,Hongbo Zhang,Feng Qiu,Shiyoshi Yokoyama

DOI: https://doi.org/10.1364/cleo_si.2019.sth1n.7

2019-01-01

Abstract:We experimentally demonstrate a 20-Gb/s PAM4 transmitter using EO polymer dual-drive MZM with imbalanced binary driving electronics, eliminating the need of power-hungry DAC or linear drivers and featuring low power consumption and potentially low cost. © 2019 The Author(s)
Silicon photonic dual-drive MIM based 56 Gb/s DAC-less and DSP-free PAM-4 transmission

Rui Li,David Patel,Eslam El-Fiky,Alireza Samani,Zhenping Xing,Yun Wang,David V Plant

DOI: https://doi.org/10.1364/OE.26.005395

2018-03-05

Abstract:We report two designs of silicon photonic dual-drive Michelson interferometric modulators (MIMs) suitable for four-level pulse amplitude modulation (PAM-4) that do not require digital-to-analog converters or digital signal processing. The PN junctions in MIM-1 have an asymmetric geometry and 4 doping concentrations, while those in MIM-2 have a symmetric geometry and 6 doping concentrations. We simulate and experimentally demonstrate that MIM-2 has a larger modulation efficiency and a better electro-optic (EO) bandwidth than MIM-1. The measured VπLπ of MIM-2 at -2 V bias is 0.8 V-cm, and the measured 3-dB EO bandwidth at 0 V bias is 9.3 GHz. By carefully choosing the bias conditions of the device and the driving binary radio-frequency signals applied on each phase shifter, PAM-4 signals with even spacings are generated. Successful 56 Gb/s PAM-4 transmission over 2 km of standard single mode fiber is presented, with an estimated bit error rate below the hard-decision forward error correction threshold of 3.8 × 10-3.
Silicon Photonic Mach–Zehnder Modulator Architectures for on Chip PAM-4 Signal Generation

Alireza Samani,Eslam El-Fiky,Mohamed Morsy-Osman,Rui Li,David Patel,Thang Hoang,Maxime Jacques,Mathieu Chagnon,Nicols Abada,David V. Plant,Nicolas Abadia

DOI: https://doi.org/10.1109/jlt.2019.2908655

IF: 4.7

2019-07-01

Journal of Lightwave Technology

Abstract:Alireza Samani, Eslam El-Fiky, Mohamed Morsy-Osman, Rui Li, David Patel, Thang Hoang, Maxime Jacques, Mathieu Chagnon, Nicolás Abadía, David V. Plant<br/>Four level pulse amplitude modulation (PAM-4) has become the modulation format of choice to replace on–off keying (OOK) for the 400 Gb/s short reach optical communications systems. In this paper, we investigate the possible modifications to conventional Mach–Zehnder modulator ... [J. Lightwave Technol. 37, 2989-2999 (2019)]

engineering, electrical & electronic,optics,telecommunications
High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Oskars Ozolins,Armands Ostrovskis,Michael Koenigsmann,Toms Salgals,Benjamin Krüger,Fabio Pittalà,Ryan P. Scott,Hansjoerg Haisch,Hadrien Louchet,Aleksandrs Marinins,Sandis Spolitis,Jurgis Porins,Lu Zhang,Richard Schatz,Xianbin Yu,Vjaceslavs Bobrovs,Markus Gruen,Xiaodan Pang

DOI: https://doi.org/10.1109/icton59386.2023.10207236

2023-01-01

Abstract:Silicon photonics (SiP) is a key enabling technology for high-baudrate communication. It is a key technology for future 800 Gbps and 1.6 Tbps solutions to meet the ever-increasing demands. The 800G pluggable multi-source agreement (MSA) suggests that intensity-modulated direct-detection (IM/DD) is the most sustainable way forward [1]. The high operational bandwidth of each transceiver component is essential. An ultra-compact SiP slow light modulator with record-high bandwidth of 110 GHz shows the potential [2]. Therefore, both multilevel pulse amplitude modulation (PAM) and on-off keying (OOK) should be considered. SiP offers excellent production yield and has a substantial role in optical interconnects. SiP ring resonator modulators (RRM) have unique advantages like a small footprint, simple driver configuration, low power consumption, and suitability for multichannel applications. On the other hand, the SiP Mach-Zehnder modulator (MZM) offers differential drive benefits.
Optical PAM-4 Signal Generation Using a Silicon Mach-Zehnder Optical Modulator

Sizhu Shao,Jianfeng Ding,Lingchen Zheng,Kaiheng Zou,Lei Zhang,Fan Zhang,Lin Yang

DOI: https://doi.org/10.1364/oe.25.023003

IF: 3.8

2017-01-01

Optics Express

Abstract:In this paper we demonstrate the 4 level pulse amplitude modulation (PAM-4) signal generation through a silicon Mach-Zehnder modulator. The baud speed of the PAM-4 signal generation is characterized up to 32 Gbaud (64Gb/s). And we have measured the device's bit error rate (BER) up to 32 Gbaud and the spurious free dynamic range (SFDR) of the distortion component of the modulated light.
Silicon Mach-Zehnder Modulator for 120 Gbps PAM-4 and 200 Gbps 16-QAM Signal Generation

Lingchen Zheng,Sizhu Shao,Jincheng Dai,Gaolu Zhang,Yixiao Zhu,Pengfei Wang,Lei Zhang,Xin Fu,Fan Zhang,Lin Yang

DOI: https://doi.org/10.1109/group4.2019.8926130

2019-01-01

Abstract:Using silicon Mach-Zehnder modulator, we demonstrate single-polarization 120 Gbps PAM-4 and 200 Gbps 16-QAM signal generation with the bit error ratio (BER) below 7% overhead hard-decision forward error correction (HD-FEC) threshold of 3.8e-3.
Power-Efficient O-Band 40 Gbit/s PAM4 Transmitter Based on Dual-Drive Cascaded Carrier-Depletion and Carrier-Injection Silicon Mach-Zehnder Modulator with Binary Driving Electronics at CMOS Voltages

Guo-Wei Lu,Hong-Bo Zhang,Satoshi Shinada,Jianxun Hong,Yongpeng Cheng,Shiyoshi Yokoyama

DOI: https://doi.org/10.1109/jstqe.2021.3056721

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:We present an O-band four-level pulse amplitude modulation (PAM4) transmitter based on a dual-drive silicon modulator with binary driving electronics at CMOS voltages, effectively eliminating the need for power-hungry digital-to-analog converters (DACs) and RF drivers. The fabricated dual-drive silicon modulator has cascaded p-n junction and p-i-n junction embedded in each arm of Mach-Zehnder interferometer, implementing high-speed data modulation and efficient bias control, respectively. Power dissipation of around 611 fJ/bit is obtained when synthesizing 46 Gb/s PAM4, showing high power efficiency. The fabricated silicon modulator exhibits a π-voltage-length product of 4.5 V·mm, and a 3-dB bandwidth of up to 27 GHz. Meanwhile, to implement a power-efficient PAM4 transceiver, the digital signal processing (DSP) at the receiver side is also discussed by balancing the performance and complexity. With a low-complexity DSP, negligible power penalty is observed after transmission over 38-km SSMF for both synthesized 20 Gb/s and 40 Gb/s PAM4. The presented PAM4 transmitter takes the advantages of both carrier-depletion and carrier-injection phase shifters for effective data modulation and bias control in PAM4 signalingand provides a power-efficient transmitter solution by eliminating the use of power-hungry DACs or RF drivers for datacenter interconnects.
THz PAM-4 signal generation by a modulator driven by binary scheme with different driving voltages

Junjie Ding,Miao Kong,Kaihui Wang,Jianjun Yu

DOI: https://doi.org/10.1016/j.yofte.2020.102360

IF: 2.8

2020-01-01

Optical Fiber Technology

Abstract:•A cost-effective solution to THz PAM-4 signal generation with simple configuration.•A novel scheme for THz PAM-4 signal generation without digital-to-analog converter.•4-Gbaud PAM-4 signal transmission using a dual-polarization Mach-Zehnder modulator.•Transmission over 1-m wireless link in the photonics aided terahertz-wave system.
200-Gbit/s PAM4 Generation by a Dual-Polarization Mach-Zehnder Modulator Without DAC

Kaihui Wang,Miao Kong,Wen Zhou,Junjie Ding,Jianjun Yu

DOI: https://doi.org/10.1109/lpt.2020.3017535

IF: 2.6

2020-01-01

IEEE Photonics Technology Letters

Abstract:In this experiment, we generate PAM4 signals based on a dual-polarization Mach-Zehnder modulator (DP-MZM) without DAC. Two high-speed binary OOK signals with different driving voltages are used to modulate a DP-MZM. After modulation, the intensity of the optical OOK signal in a polarization state is 0.7 times of the other. In this way, up to 200-Gbit/s PAM4 signals can be successfully generated. We also measure the BER performance of the generated PAM4 signals after 1-km dispersion shifting fiber (DSF) transmission. Based on the experimental results, the generated 160-Gbit/s PAM4 signal can be successfully transmitted over 1-km DSF, satisfying the hard-decision forward error correction (HD-FEC) threshold of 3.8 × 10 -3 . Moreover, the system can support up to 200-Gbit/s PAM4 signal transmission over 1-km DSF when satisfying the soft-decision forward error correction (SD-FEC) threshold of 2 × 10 -2 .
High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.21.004116

IF: 3.8

2013-01-01

Optics Express

Abstract:We demonstrate a high-speed silicon Mach-Zehnder modulator (MZM) with low insertion loss, based on the carrier depletion effect in a lateral PN junction. A 1.9 dB on-chip insertion loss and a V pi L pi < 2 V.cm were achieved in an MZM with a 750 mu m-long phase shifter by properly choosing the doping concentration and precisely locating the junction. High-speed modulations up to 45-60 Gbit/s have been demonstrated with an additional 1.6 dB optical loss, indicating a total insertion loss of 3.5 dB. A high extinction ratio of 7.5 dB was also realized at the bit rate of 50 Gbit/s with an acceptable insertion loss of 6.5 dB. (C)2013 Optical Society of America
84 GHz Millimeter-Wave PAM4 Signal Generation Based on One PDM-MZM Modulator and One Polarizer Without DAC and Filters

Junting Shi,Yiran Wei,Kaihui Wang,Miao Kong,Wen Zhou,Bowen Zhu,Yanyi Wang,Jiao Zhang,Jianjun Yu

DOI: https://doi.org/10.1016/j.optcom.2021.127480

IF: 2.4

2022-01-01

Optics Communications

Abstract:In this paper, a novel scheme to employ one external polarization division multiplexing Mach-Zehnder Modulator (PDM-MZM) and one polarizer to generate millimeter-wave four-level pulse amplitude modulation (PAM4) signal is proposed without the usage of expensive and power hungry digital-to-analog converter (DAC). Firstly, we theoretically derive the generation conditions for the mm-wave PAM4 signal scheme. Based on this cost-effective scheme, 6 Gbaud PAM4 signal carried by 84 GHz millimeter-wave transmission over 15 km single-mode fiber (SMF-28) with only 0.5 dB power penalty without any CD compensation is experimentally demonstrated. Furthermore, VPI simulation software is employed to numerically simulate the mm-wave PAM4 signal generation and explore the influences of polarization rotation of the polarizer and direct current (DC) Bias on the performance of generated W-band signals. In a word, it would be a promising scheme for future 5G short-reach intensity modulation and direct detection (IM/DD) system.
Silicon PAM-4 optical modulator driven by two binary electrical signals with different peak-to-peak voltages

Lingchen Zheng,Jianfeng Ding,Sizhu Shao,Lei Zhang,Lin Yang

DOI: https://doi.org/10.1364/OL.42.002213

2017-06-01

Abstract:We demonstrate a silicon PAM-4 optical modulator, which is based on a symmetric Mach-Zehnder interferometer. Two uncorrelated binary electrical signals with different peak-to-peak voltages are applied to the phase shifters of the silicon optical modulator. Accordingly, two different phase shifts are generated in the two arms. After the permutation, there are totally four phase differences between the two arms and the output optical power has four levels. The device can work at 32 Gbaud in the wavelength range from 1525 to 1565 nm, which is promising for the next-generation high-speed silicon optical link.
W-band PAM4 Signal Generation by a Modulator Driven by Binary Scheme with Different Driving Voltage

Yiran Wei,Miao Kong,Kaihui Wang,Jianjun Yu

DOI: https://doi.org/10.1016/j.optcom.2020.125995

IF: 2.4

2020-01-01

Optics Communications

Abstract:We propose a novel W-band pulse amplitude modulation-4 (PAM4) signal generation to simplify the complexity of central office (CO), remote access unit (RAU) and wireless terminals. Only one dual-polarization Mach-Zehnder Modulator (DP-MZM) is used and no extra optical link is occupied. Moreover, mull-level digital-to analog converter (DAC) is not necessary. In this paper, we theoretically analyze and experimentally demonstrate the proposed method. After 1 m wireless propagation, the 84 GHz W-band signal can carry up 10 G baud data with a bit error rate (BER) less than the hard-decision forward error correction (HD-FEC) threshold of 3.8x10-3 with the photodiode (PD) input power of 0 dBm.
Optimization of PAM-4 transmitters based on lumped silicon photonic MZMs for high-speed short-reach optical links

Shiyu Zhou,Hsin-Ta Wu,Khosrov Sadeghipour,Carmelo Scarcella,Cormac Eason,Marc Rensing,Mark J Power,Cleitus Antony,Peter O'Brien,Paul D Townsend,Peter Ossieur

DOI: https://doi.org/10.1364/OE.25.004312

2017-02-20

Abstract:We demonstrate how to optimize the performance of PAM-4 transmitters based on lumped Silicon Photonic Mach-Zehnder Modulators (MZMs) for short-reach optical links. Firstly, we analyze the trade-off that occurs between extinction ratio and modulation loss when driving an MZM with a voltage swing less than the MZM's Vπ. This is important when driver circuits are realized in deep submicron CMOS process nodes. Next, a driving scheme based upon a switched capacitor approach is proposed to maximize the achievable bandwidth of the combined lumped MZM and CMOS driver chip. This scheme allows the use of lumped MZM for high speed optical links with reduced RF driver power consumption compared to the conventional approach of driving MZMs (with transmission line based electrodes) with a power amplifier. This is critical for upcoming short-reach link standards such as 400Gb/s 802.3 Ethernet. The driver chip was fabricated using a 65nm CMOS technology and flip-chipped on top of the Silicon Photonic chip (fabricated using IMEC's ISIPP25G technology) that contains the MZM. Open eyes with 4dB extinction ratio for a 36Gb/s (18Gbaud) PAM-4 signal are experimentally demonstrated. The electronic driver chip has a core area of only 0.11mm2 and consumes 236mW from 1.2V and 2.4V supply voltages. This corresponds to an energy efficiency of 6.55pJ/bit including Gray encoder and retiming, or 5.37pJ/bit for the driver circuit only.
High-speed low-chirp PAM-4 transmission based on push-pull silicon photonic microring modulators

Rui Li,David Patel,Eslam El-Fiky,Alireza Samani,Zhenping Xing,Mohamed Morsy-Osman,David V Plant

DOI: https://doi.org/10.1364/OE.25.013222

2017-06-12

Abstract:We report a silicon photonic modulator based on the use of dual parallel microring modulators (MRMs) inserted in a Mach-Zehnder interferometer (MZI). It is operated in a push-pull configuration for low-chirp transmission at approximately 1550 nm. The chirp parameters of the device are measured using 10 Gb/s on-off keying (OOK) transmission over 20 km of standard single mode fiber (SSMF), and they are less than 0.01, showing the low-chirp characteristic of the modulator. We further demonstrate four-level pulse amplitude modulation (PAM-4) transmission at 92 Gb/s over 1 km of SSMF and at 40 Gb/s over 20 km of SSMF. The measured bit error rates (BERs) are below the hard-decision (HD) forward error correction (FEC) threshold of 3.8 × 10-3.
A Silicon Optical Single Sideband Modulator with Ultra-High Sideband Suppression Ratio

Penghui Xia,Hui Yu,Qiang Zhang,Zhilei Fu,Xiaofei Wang,Yuehai Wang,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1109/lpt.2020.3006468

IF: 2.6

2020-01-01

IEEE Photonics Technology Letters

Abstract:Optical single sideband (OSSB) modulation is widely used in radio-over-fiber (RoF) system, nanophotonic phase noise filter, frequency-modulated continuous wave (FMCW) lidar and so on. We demonstrate a silicon dual-parallel Mach-Zehnder modulator (DP-MZM) with tunable optical power splitting ratio to generate OSSB signal with ultra-high sideband suppression ratio (SSR). To mitigate the SSR deterioration caused by the limited extinction ratios (ER) of the two sub-MZMs due to the process tolerance and the imbalance in their RF driving powers in practical RF links, we adjust the distribution of the incident optical power between the two sub-MZMs with a $1\times 2$ switch. With this technique, the SSR measured at 20 GHz is better than 39.1 dB. A theoretical analysis is also provided to explain how the unwanted sideband is suppressed by adjusting the optical power splitting ratio.
Towards Single Lane 200G Optical Interconnects with Silicon Photonic Modulator

Yixiao Zhu,Fan Zhang,Fan Yang,Lei Zhang,Xiaoke Ruan,Yanping Li,Zhangyuan Chen

DOI: https://doi.org/10.1109/jlt.2019.2944762

IF: 4.7

2020-01-01

Journal of Lightwave Technology

Abstract:In this work, based on a conventional silicon photonic travelling-wave Mach-Zehnder modulator (MZM) with a 3-dB bandwidth of 22.5 GHz, we experimentally demonstrate ultra-high speed optical interconnects with Nyquist shaped pulse amplitude modulation (PAM) signals. For bandwidth-limited systems, a two-tap digital post filter is employed to suppress the equalization-enhanced high frequency noise. The post filter induced inter-symbol interference (ISI) is subsequently eliminated by maximum likelihood sequence detection (MLSD). Enabled by the post filter and MLSD, we achieve 200 Gb/s (80 Gbaud) PAM-6 signal direct detection (DD) transmission over 1 km standard single-mode fiber (SSMF) with a bit-error rate (BER) below the 20% hard-decision forward error correction (HD-FEC) threshold of 1.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−2</sup> . For PAM-4 format, we successfully transmit 192 Gb/s (96 Gbaud) and 176 Gb/s (88 Gbaud) signals over 1 km and 2 km SSMF, respectively, with BERs lower than the 20% HD-FEC threshold. For PAM-8 format, 192 Gb/s (64 Gbaud) and 168 Gb/s (56 Gbaud) signals are generated at back-to-back (BTB) and transmitted over 1 km SSMF, respectively. To our best knowledge, we achieve the highest single lane bitrates ever reported for single polarization PAM-4/6/8 signal generation and DD transmission with all-silicon MZM. The flexible receiver-side digital signal processing (DSP) can significantly enhance the performance of silicon MZM, which provides a promising solution for future single lane 200 G data-center interconnects.
A high linear silicon Mach-Zehnder modulator by the dual-series architecture

Qiang Zhang,Hui Yu,Zhilei Fu,Penghui Xia,Xiaofei Wang

DOI: https://doi.org/10.1364/OFC.2020.Th2A.12

2020-01-01

Abstract:We experimentally demonstrate a highly linear dual-series silicon modulator by tuning properly the power splitting ratio of the driving RF signal on the its two sub-MZMs, with SFDR of 109.5/100.5 dB·Hz2/3 at 1/10 GHz.
Ultrahigh-linearity dual-drive scheme using a single silicon modulator

Hengsong Yue,Kaizhong Chen,Tao Chu

DOI: https://doi.org/10.1364/OL.492756

2023-01-01

Abstract:Here, a high-linearity dual-drive scheme using a single silicon dual-drive Mach-Zehnder modulator is presented. The bias voltages and RF amplitudes of the two driv-ing arms are adjusted such that the nonlinearity of the transfer function of the Mach-Zehnder interferometer can-cels out the nonlinear response of the arms. Using the proposed scheme, the spurious-free dynamic range of the third-order intermodulation distortion is 123.4 dB Hz6/7, which is believed to be a record-breaking value for sili-con modulators. In comparison, the result obtained using a conventional single-drive scheme is 102.6 dB & BULL;Hz2/3. The proposed scheme could simplify the design of modulators and promote high-performance microwave photonic links. & COPY; 2023 Optica Publishing Group
Silicon Dual-Series Mach-Zehnder Modulator with High Linearity

Qiang Zhang,Hui Yu,Linghua Wang,Penghui Xia,Qiman Cheng,Zhilei Fu,Xiaofei Wang,Jianyi Yang

DOI: https://doi.org/10.1364/ol.44.005655

IF: 3.6

2019-01-01

Optics Letters

Abstract:In this Letter, we demonstrate a highly linear silicon modulator based on the dual-series Mach-Zehnder modulator (MZM) architecture. The two sub-MZMs are biased at quadrature points of opposite polarities. A proper power-splitting ratio of the driving RF signal on the two sub-MZMs enables the suppression of the third order intermodulation distortion (IMD3). The spurious-free dynamic ranges (SFDRs) for IMD3 are 109.5/100.5 dB.Hz(2/3 )at 1/10 GHz. In contrast, the reference single MZM on the same chip exhibits SFDRs of 95.2/86.8 dB.Hz(2/3) at 1/10 GHz at its optimal reverse bias voltage. (C) 2019 Optical Society of America

DAC-less PAM4 signal generation using a silicon dual-drive push–pull MZI modulator

DAC-less PAM4 Transmitter Using Electro-Optic Polymer Dual-Drive Mach-Zehnder Modulator with Imbalanced Binary Driving Electronics

Silicon photonic dual-drive MIM based 56 Gb/s DAC-less and DSP-free PAM-4 transmission

Silicon Photonic Mach–Zehnder Modulator Architectures for on Chip PAM-4 Signal Generation

High-Baudrate Silicon Photonics Ring Resonator and Mach-Zehnder Modulators for Short-Reach Applications

Optical PAM-4 Signal Generation Using a Silicon Mach-Zehnder Optical Modulator

Silicon Mach-Zehnder Modulator for 120 Gbps PAM-4 and 200 Gbps 16-QAM Signal Generation

Power-Efficient O-Band 40 Gbit/s PAM4 Transmitter Based on Dual-Drive Cascaded Carrier-Depletion and Carrier-Injection Silicon Mach-Zehnder Modulator with Binary Driving Electronics at CMOS Voltages

THz PAM-4 signal generation by a modulator driven by binary scheme with different driving voltages

200-Gbit/s PAM4 Generation by a Dual-Polarization Mach-Zehnder Modulator Without DAC

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

84 GHz Millimeter-Wave PAM4 Signal Generation Based on One PDM-MZM Modulator and One Polarizer Without DAC and Filters

Silicon PAM-4 optical modulator driven by two binary electrical signals with different peak-to-peak voltages

W-band PAM4 Signal Generation by a Modulator Driven by Binary Scheme with Different Driving Voltage

Optimization of PAM-4 transmitters based on lumped silicon photonic MZMs for high-speed short-reach optical links

High-speed low-chirp PAM-4 transmission based on push-pull silicon photonic microring modulators

A Silicon Optical Single Sideband Modulator with Ultra-High Sideband Suppression Ratio

Towards Single Lane 200G Optical Interconnects with Silicon Photonic Modulator

A high linear silicon Mach-Zehnder modulator by the dual-series architecture

Ultrahigh-linearity dual-drive scheme using a single silicon modulator

Silicon Dual-Series Mach-Zehnder Modulator with High Linearity