Negative-U system of carbon vacancy in 4H-SiC.

N. T. Son,X. Trinh,L. Løvlie,B. Svensson,K. Kawahara,J. Suda,T. Kimoto,T. Umeda,J. Isoya,T. Makino,T. Ohshima,E. Janzén
DOI: https://doi.org/10.1103/PHYSREVLETT.109.187603
IF: 8.6
2012-10-31
Physical Review Letters
Abstract:Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V(C)) in 4H-SiC and its negative-U properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two most common defects in as-grown 4H-SiC--the Z(1/2) lifetime-limiting defect and the EH(7) deep defect--are related to the double acceptor (2-|0) and single donor (0|+) levels of V(C), respectively.
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