Sensitive and Ultrabroadband Phototransistor Based on Two-Dimensional Bi2O2Se Nanosheets
Tong,Yunfeng Chen,Shuchao Qin,Weisheng Li,Junran Zhang,Chunhui Zhu,Chunchen Zhang,Xiao Yuan,Xiaoqing Chen,Zhonghui Nie,Xinran Wang,Weida Hu,Fengqiu Wang,Wenqing Liu,Peng Wang,Xuefeng Wang,Rong Zhang,Yongbing Xu
DOI: https://doi.org/10.1002/adfm.201905806
IF: 19
2019-01-01
Advanced Functional Materials
Abstract:Bi2O2Se, a high-mobility and air-stable 2D material, has attracted substantial attention for application in integrated logic electronics and optoelectronics. However, achieving an overall high performance over a wide spectral range for Bi2O2Se-based devices remains a challenge. A broadband phototransistor with high photoresponsivity (R) is reported that comprises high-quality large-area (approximate to 180 mu m) Bi2O2Se nanosheets synthesized via a modified chemical vapor deposition method with a face-down configuration. The device covers the ultraviolet (UV), visible (Vis), and near-infrared (NIR) wavelength ranges (360-1800 nm) at room temperature, exhibiting a maximum R of 108 696 A W-1 at 360 nm. Upon illumination at 405 nm, the external quantum efficiency, R, and detectivity (D*) of the device reach up to 1.5 x 10(7)%, 50055 A W-1, and 8.2 x 10(12) Jones, respectively, which is attributable to a combination of the photogating, photovoltaic, and photothermal effects. The devices reach a -3 dB bandwidth of 5.4 kHz, accounting for a fast rise time (tau(rise)) of 32 mu s. The high sensitivity, fast response time, and environmental stability achieved simultaneously in these 2D Bi2O2Se phototransistors are promising for high-quality UV and IR imaging applications.