Investigations of Dual Ge Gate Integration in Advanced CMOS Process

J. Alieu,M. Jurczak,T. Skotnicki,G. Brémond,K. Souifi,M. Paoli,D. Bensahel,J. Galvier,M. Haond
Abstract:This paper presents, for the first time, device performance and reliability issues of pure dual Ge gate. This dual gate allows the process to be compatible with high Ionllow Ioff applications which is not the case with a single P+ Ge gate. We discuss the Ph activation in Ge gates and the interaction between Ge and gate oxide. This interaction is analysed by measurements of defect assisted tunnel conduction through the gate oxide. Finally, we show good reliability results from standard accelerated tests, after high voltage stress.
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