Abstract:This work aims to study the conditions of topological phase transition (TPT) between the topological and trivial states in the antiferromagnetic topological insulator (AFM TI) MnBi[Formula: see text]Te[Formula: see text] and propose some theory about the relationship of this TPT with the possibility of axion-like state realization in this material. Using the density functional approach we have analyzed the changes in the electronic and spin structure of topological surface states (TSSs) and the nearest conduction and valence bands (CB and VB) including the changes in the bulk band gap as well as the Dirac point (DP) gap in TSSs under variation of the spin-orbit coupling strength in the region of the TPT for infinite crystal and slab with a surface both. We have shown that in both cases the TPT occurs with inversion of the contributions of the Bi-[Formula: see text] and Te-[Formula: see text] states of different parity at the gap edges related to change in the gap sign. In the case of surface calculations, the Bi-[Formula: see text] and Te-[Formula: see text] states at the edges of the bulk band gap and their inversion at the TPT point are transformed into the TSSs with an energy gap at the DP. In this case the TPT takes place without closing the band gap, i.e. with a "jump" through zero and the formation of the nonzero gap during such a transition. Our calculations show that the TPT point is also characterized by an inversion of the out-of-plane spin polarization [Formula: see text] at the [Formula: see text] point for lower and upper parts of the Dirac cone and a significant spatial redistribution of the TSSs between the surface and the bulk. We suppose that the nonzero Dirac gap can have some relationship with the formation of the axion-like state, which presumably couples nonmagnetic spin-orbit and magnetic contributions at the boundary between the topological and trivial phases for a system with parameters close to the TPT conditions. A practically realized system is proposed - the AFM TI with a stoichiometry close to that of MnBi[Formula: see text]Te[Formula: see text]Se[Formula: see text] with partial (about 50%) substitution of Te atoms for Se atoms in MnBi[Formula: see text]Te[Formula: see text] which can be an experimental platform for the implementation and experimental analysis of the TPT and the corresponding possibility of the axion-like state realization in Condensed Matter. Besides, such system could serve as a good platform for studying the dynamic axion effect, where the axion field fluctuations are maximised when a small external field is applied to the system which state is close to the TPT.

Volume expansive pressure (VEP) driven non-trivial topological phase transition in LiMgBi

Pressure Induced Topological Phase Transition in Layered Bi2S3

Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

Magnetic topological insulator MnBi 6 Te 10 with a zero-field ferromagnetic state and gapped Dirac surface states

Magnetic Topological Insulator MnBi6Te10 with a Zero-Field Ferromagnetic State and Gapped Dirac Surface States

Hydrostatic Pressure-Induced Magnetic and Topological Phase Transitions in the MnBi2Te4 Family of Materials

Non-trivial topological phases in transition metal rich half-Heusler Oxides

Large-Gap and Topological Crystalline Insulating Phase in RbZnBi and CsZnBi

Engineering Quantum Anomalous Hall Effect in Monolayer Janus MnBi2SexTe4-x

Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi_4I_4

Controllable Topological Insulator Phases in Litharge-phase InBi Monolayer

The anomalous Hall Effect in a Magnetically Extended Topological Insulator Heterostructure

Tetragonal Bismuth Bilayer: A Stable and Robust Quantum Spin Hall Insulator

Topological phase transition in the antiferromagnetic topological insulator MnBi[Formula: see text]Te[Formula: see text] from the point of view of axion-like state realization

Robustness of Topological Insulating Phase Against Vacancy, Vacancy Cluster, and Grain Boundary Bulk Defects

Experimental Realization of an Intrinsic Magnetic Topological Insulator

Realization of a New Topological Crystalline Insulator and Lifshitz Transition in PbTe

High-Pressure Phase Transitions And Structures Of Topological Insulator Bitel

Half-Heusler Compounds As A New Class of Three-Dimensional Topological Insulators

Strongly enhanced Berry dipole at topological phase transitions in BiTeI

A Magnetic Topological Insulator in Two-Dimensional EuCd2Bi2: Giant Gap with Robust Topology Against Magnetic Transitions