B-site acceptor doped AgNbO3 lead-free antiferroelectric ceramics: The role of dopant on microstructure and breakdown strength

Xin Wang,Pengrong Ren,Dong Ren,Linfeng Xie,Tingting Li,Junqi Xu,Yingxue Xi,Chen Yang
DOI: https://doi.org/10.1016/j.ceramint.2020.09.222
IF: 5.532
2021-02-01
Ceramics International
Abstract:<p>B-site aliovalent modification of AgNbO<sub>3</sub> with a nominal composition of Ag(Nb<sub>1-x</sub>M<sub>x</sub>)O<sub>3-x/2</sub> (x = 0.01, M = Ti, Zr and Hf) was prepared. The effects of dopants on microstructure, dielectric, ferroelectric and conduction properties were investigated. The results indicate that the introduction of acceptor dopant does not lead to grain coarsening. Zr<sup>4+</sup> and Hf<sup>4+</sup> doping are beneficial to stabilize the antiferroelectric phase of AgNbO<sub>3</sub>. Among all the samples, Ti<sup>4+</sup> doped AgNbO<sub>3</sub> has the minimum resistivity while Hf<sup>4+</sup> doped AgNbO<sub>3</sub> has the maximum resistivity, therefore, Hf<sup>4+</sup> doped AgNbO<sub>3</sub> has high BDS. The XPS results indicate that the conduction behaviour is associated with the concentration of oxygen vacancies. This work hints that acceptor dopant is also effective on the microstructure control and chemical modification of AgNbO<sub>3</sub>-based ceramics.</p>
materials science, ceramics
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