Regulation of oxygen vacancies in nitrogen-doped Ga2O3 films for high-performance MSM solar-blind UV photodetectors
Jinjin Wang,Xueqiang Ji,Song Qi,Zhitong Li,Zuyong Yan,Mengcheng Li,Xu Yan,Aoxue Zhong,Chao Lu,Xiaohui Qi,Peigang Li
DOI: https://doi.org/10.1039/d3tc00345k
IF: 6.4
2023-04-29
Journal of Materials Chemistry C
Abstract:Gallium oxide (Ga 2 O 3 )-based solar-blind photodetectors (SBPDs) have shown promising applications. However, the concentration of native oxygen vacancies (V O ) impacts the photoelectrical performance of Ga 2 O 3 films. Herein, a nitrogen-doping method is proposed to decrease the concentration of V O in Ga 2 O 3 films. Specifically, Ga 2 O 3 thin films were grown by radio frequency magnetron sputtering using nitrogen-containing ceramic targets at different substrate temperatures ranging from room temperature to 800 °C. Furthermore, their structural, optical and electrical properties were systematically investigated. Since the concentration of V O in Ga 2 O 3 films is largely lowered through introduction of nitrogen species at V O sites, the persistent photoconductivity effect is significantly restrained. As a result, N-doped Ga 2 O 3 photodetectors exhibit large photo-to-dark current ratios (PDCRs) of 4.6 × 10 6 , a high responsivity of 0.27 A W −1 , a large external quantum efficiency of 132.5%, and a high specific detectivity of 6.6 × 10 11 Jones at 900 μW cm −2 light intensities at 5 V. Moreover, the PDCRs and detectivity of a N-doped device are increased by 2.2 × 10 3 and 50.6 times, respectively, as compared to those of the undoped device. These results demonstrate that the regulation of V O by nitrogen-doping can effectively improve the photoelectric performance of the device, opening up new opportunities for fabricating high-performance SBPDs.
materials science, multidisciplinary,physics, applied