Ultrabroadband and High-Detectivity Photodetector Based on WS 2 /Ge Heterojunction through Defect Engineering and Interface Passivation
Di Wu,Jiawen Guo,Chaoqiang Wang,Xiaoyan Ren,Yongsheng Chen,Pei Lin,Longhui Zeng,Zhifeng Shi,Xin Jian Li,Chong-Xin Shan,Jiansheng Jie
DOI: https://doi.org/10.1021/acsnano.1c02007
IF: 17.1
2021-05-24
ACS Nano
Abstract:Broadband photodetectors are of great importance for numerous optoelectronic applications. Two-dimensional (2D) tungsten disulfide (WS<sub>2</sub>), an important family member of transition-metal dichalcogenides (TMDs), has shown great potential for high-sensitivity photodetection due to its extraordinary properties. However, the inherent large bandgap of WS<sub>2</sub> and the strong interface recombination impede the actualization of high-sensitivity broadband photodetectors. Here, we demonstrate the fabrication of an ultrabroadband WS<sub>2</sub>/Ge heterojunction photodetector through defect engineering and interface passivation. Thanks to the narrowed bandgap of WS<sub>2</sub> induced by the vacancy defects, the effective surface modification with an ultrathin AlO<sub><i>x</i></sub> layer, and the well-designed vertical n<i>–</i>n heterojunction structure, the WS<sub>2</sub>/AlO<sub><i>x</i></sub>/Ge photodetector exhibits an excellent device performance in terms of a high responsivity of 634.5 mA/W, a large specific detectivity up to 4.3 × 10<sup>11</sup> Jones, and an ultrafast response speed. Significantly, the device possesses an ultrawide spectral response spanning from deep ultraviolet (200 nm) to mid-wave infrared (MWIR) of 4.6 μm, along with a superior MWIR imaging capability at room temperature. The detection range has surpassed the WS<sub>2</sub>-based photodetectors in previous reports and is among the broadest for TMD-based photodetectors. Our work provides a strategy for the fabrication of high-performance ultrabroadband photodetectors based on 2D TMD materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c02007?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c02007</a>.<i>I–V</i> curves of Au–WS<sub>2</sub>–Au and In/Ga–Ge–In/Ga structures; <i>I–V</i> curves of the heterojunction with different AlO<sub><i>x</i></sub> thickness; photoresponse performance of Ge wafer and the WS<sub>2</sub>/AlO<sub><i>x</i></sub>/Ge heterojunction device measured under light illumination of 1550 nm; current noise power spectrum of the WS<sub>2</sub>/AlO<sub><i>x</i></sub>/Ge heterojunction device; photoresponse property of the device to UV light of 265 nm; temperature-dependent current of the WS<sub>2</sub>/AlO<sub><i>x</i></sub>/Ge heterojunction device; theoretically calculated electronic band structures of WS<sub>2</sub> with different S/W atomic ratios; EDS spectrum of WS<sub>2</sub> layer with an S/W ratio of 1.81; temporal photoresponse of the WS<sub>1.81</sub>-based heterojunction device to IR light signals of 2.2 and 3.0 μm; optical image and photoresponse properties of a WS<sub>2</sub> flake; Tauc plots of WS<sub>2</sub> films; photoresponse performances of a WS<sub>2</sub>/Si heterojunction; response speeds of a WS<sub>2</sub>/AlO<sub><i>x</i></sub>/Ge heterojunction device at 2.2, 3.0, and 4.6 μm; calculated energy band diagram and carrier concentration distribution; schematic diagrams of fabrication process for the heterojunction device (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c02007/suppl_file/nn1c02007_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology