Abstract:Anthracene single crystals were successfully grown at an ambient temperature over 35 days using benzene as the solvent by the slow evaporation solution method. Powder X-ray diffraction was used to examine the generated anthracene single crystal and it contains clear high-intensity peaks, which indicates the excellent crystallinity. The strain in the structure of the established material was estimated using the Hall–Williamson technique and the parameters of the lattice were determined via the Chekcell software tool. By using Fourier transform infrared spectrum analysis, the fundamental vibrational modes of anthracene crystals have been qualitatively identified. Between 200 and 1100 nm in wavelength, the optical characteristics were noted, and it was proved that the crystal has less absorption in the entire visible region and near IR regions with a cut-off wavelength of 233 nm. The crystal has a high degree of emission at 532 nm, which can be used for green light-emitting diode applications, according to photoluminescence experiments. Using scanning electron microscopy, the surface and longitudinal morphology of anthracene single crystals were investigated. The positive photoconductivity nature of the anthracene single crystal was determined by photoconductivity analysis. The electrical properties were investigated by temperature-dependent dielectric (constant and loss) analyses. The Z-scan investigation was utilized for the first time to study the third harmonic generation (THG) analysis on the sample, and the outcomes show that the anthracene crystal is appropriate for frequency conversion usages. The anthracene crystals with high THG values may be more suitable for NLO device functions.

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