Abstract:A comprehensive quantum transport study of ultrathin-body silicon double-gate pMOSFETs with gate length <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {14}$ </tex-math></inline-formula>, 10, and 7 nm is performed by in-house developed nonequilibrium Green’s function solver employing the six-band <inline-formula> <tex-math notation="LaTeX">${k} \cdot {p}$ </tex-math></inline-formula> Hamiltonian. The effects of channel length, body thickness, as well as confinement and transport crystal orientations are studied systematically. Both <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> characteristics are analyzed in this paper. Furthermore, the CMOS performance benchmarking results, such as switching delay, energy consumption, and their product, are calculated with the influence of parasitic resistances and capacitances treated in an appropriate way. It is found that the crystal orientation effect on drive current is significant at both long and short channel lengths, while its effect on effective capacitance is more observable at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm. The drive current at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {14}$ </tex-math></inline-formula> nm and <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}} = \textsf {7}$ </tex-math></inline-formula> nm can be well explained by average ballistic hole velocity and source-to-drain tunneling ratio, respectively. Meanwhile, the effective capacitance is not only determined by the density of states but also affected by the distribution of holes in the confined direction. Both intrinsic and extrinsic performance assessments suggest that (001)/[100] and (110)/[001] are the optimal confinement/transport crystal orientation configurations at <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}= \textsf {7}$ </tex-math></inline-formula> nm, while <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110}{)}/[\overline {1}\textsf {10}]$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">${(}\textsf {110})/[\overline {1}\textsf {11}]$ </tex-math></inline-formula> are the best choices at longer gate lengths. As <inline-formula> <tex-math notation="LaTeX">${L}_{\textsf {g}}$ </tex-math></inline-formula> shrinks, both intrinsic and extrinsic performances will be better at a scaled body thickness.

Ballistic transport in sub-10 nm monolayer planar GaN transistors for high-performance and low-power applications

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Scaling limits of monolayer AlN and GaN MOSFETs

Electronic Properties and Ballistic Transport Performances of 2D GaO: A DFT-NEGF Study

Quantum transport simulations of sub-5 nm bilayer Ga2O3transistor for high-performance applications

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

High-Performance Ballistic Quantum Transport of Sub-10 nm Monolayer GeS Field-Effect Transistors

Performance limits exploration of sub-5 nm monolayer germanane transistors: A first-principle quantum transport simulation

Comprehensive Understanding of Electron Mobility and Superior Performance in Sub-10 nm DG ML tetrahex-GeC 2 n-type MOSFET

Ballistic transport in sub-10 nm monolayer InAs transistors for high-performance applications

Comprehensive understanding of intrinsic mobility and sub-10 nm quantum transportation in Ga2SSe monolayer

Ballistic Transport in Planar 2-D ZnXN2 (X = Si, Ge) Transistors With Ultrahigh On-State Current

Monolayer WSi2N4: A promising channel material for sub-5-nm-gate homogeneous CMOS devices

Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors

First-Principles-Based Quantum Transport Simulations of High-Performance and Low-Power MOSFETs Based on Monolayer Ga 2 O 3

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

Keynote; Material Challenges and Opportunities in Ge/III-V Channel MOSFETs

High-performance Sub-10 Nm Monolayer Bi2O2Se Transistors