Abstract:Voltage-dependent potassium (Kv) channels provide the repolarizing power that shapes the action potential duration and helps control the firing frequency of neurons. The K+ permeation through the channel pore is controlled by an intracellularly located bundle-crossing (BC) gate that communicates with the voltage-sensing domains (VSDs). During prolonged membrane depolarizations, most Kv channels display C-type inactivation that halts K+ conduction through constriction of the K+ selectivity filter. Besides triggering C-type inactivation, we show that in Shaker and Kv1.2 channels (expressed in Xenopus laevis oocytes), prolonged membrane depolarizations also slow down the kinetics of VSD deactivation and BC gate closure during the subsequent membrane repolarization. Measurements of deactivating gating currents (reporting VSD movement) and ionic currents (BC gate status) showed that the kinetics of both slowed down in two distinct phases with increasing duration of the depolarizing prepulse. The biphasic slowing in VSD deactivation and BC gate closure was strongly correlated in time and magnitude. Simultaneous recordings of ionic currents and fluorescence from a probe tracking VSD movement in Shaker directly demonstrated that both processes were synchronized. Whereas the first slowing originates from a stabilization imposed by BC gate opening, the subsequent slowing reflects the rearrangement of the VSD toward its relaxed state (relaxation). The VSD relaxation was observed in the Ciona intestinalis voltage-sensitive phosphatase and in its isolated VSD. Collectively, our results show that the VSD relaxation is not kinetically related to C-type inactivation and is an intrinsic property of the VSD. We propose VSD relaxation as a general mechanism for depolarization-induced slowing of BC gate closure that may enable Kv1.2 channels to modulate the firing frequency of neurons based on the depolarization history.

A Surprising Clarification of the Mechanism of Ion-channel Voltage-Gating

Voltage-dependent gating in K channels: experimental results and quantitative models

Theoretical Studies of Structure-Function Relationships in Kv Channels: Electrostatics of the Voltage Sensor

Quantum Calculations on the Kv1.2 Channel Voltage Sensing Domain Show H+ Transfer Provides the Gating Current

Protons in Gating the Kv1.2 Channel: A Calculated Set of Protonation States in Response to Polarization/Depolarization of the Channel, with the Complete Proposed Proton Path from Voltage Sensing Domain to Gate

Revealing a hidden conducting state by manipulating the intracellular domains in KV10.1 exposes the coupling between two gating mechanisms

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Water, Protons, and the Gating of Voltage-Gated Potassium Channels

Revealing a hidden conducting state by manipulating the intracellular domains in K V 10.1 exposes the coupling between two gating mechanisms

Lipid-mediated hydrophobic gating in the BK potassium channel

Structural determinants of voltage-gating properties in calcium channels

Revealing a hidden conducting state by manipulating the intracellular domains in K 10.1 exposes the coupling between two gating mechanisms.

Structural basis of gating modulation of Kv4 channel complexes

Intrinsic Flexibility and Gating Mechanism of the Potassium Channel KcsA

Molecular mechanism for depolarization-induced modulation of Kv channel closure

Ion Concentration-Dependent Ion Conduction Mechanism of a Voltage-Sensitive Potassium Channel

A Quantum-mechanical description of ion motion within the confining potentials of voltage gated ion channels

Potassium Channel Gating in the Absence of the Highly Conserved Glycine of the Inner Transmembrane Helix

The Pore Helix Dipole Has a Minor Role in Inward Rectifier Channel Function

A novel current pathway parallel to the central pore in a mutant voltage-gated potassium channel

Homology Modeling Identifies C-Terminal Residues That Contribute to the Ca2+ Sensitivity of A Bkca Channel