Electronic-grade epitaxial (111) KTaO 3 heterostructures

Jieun Kim,Muqing Yu,Jung-Woo Lee,Shun-Li Shang,Gi-Yeop Kim,Pratap Pal,Jinsol Seo,Neil Campbell,Kitae Eom,Ranjani Ramachandran,Mark S. Rzchowski,Sang Ho Oh,Si-Young Choi,Zi-Kui Liu,Jeremy Levy,Chang-Beom Eom
DOI: https://doi.org/10.1126/sciadv.adk4288
IF: 13.6
2024-05-25
Science Advances
Abstract:KTaO 3 heterostructures have recently attracted attention as model systems to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating heterostructure interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on high-quality epitaxial (111) KTaO 3 thin films using an adsorption-controlled hybrid PLD to overcome the vapor pressure mismatch. Electrical and structural characterizations reveal that the higher-quality heterostructure interface between amorphous LaAlO 3 and KTaO 3 thin films supports a two-dimensional electron gas with substantially higher electron mobility, superconducting transition temperature, and critical current density than that in bulk single-crystal KTaO 3 -based heterostructures. Our hybrid approach may enable epitaxial growth of other alkali metal–based oxides that lie beyond the capabilities of conventional methods.
multidisciplinary sciences
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to overcome the vapor pressure mismatch problem in the growth of potassium tantalate (KTaO₃) thin films by developing a new synthesis method - adsorption - controlled hybrid pulsed - laser deposition (hybrid PLD), thereby achieving the preparation of high - quality (111) - oriented KTaO₃ heterostructures. Specifically, the paper focuses on the following aspects: 1. **Vapor pressure mismatch problem**: The high and low vapor pressures of potassium and tantalum pose challenges to the preparation of atomically precise and compositionally uniform thin films. Traditional pulsed - laser deposition (PLD) and molecular - beam epitaxy (MBE) techniques are difficult to solve this problem alone. 2. **Growth of high - quality thin films**: By developing a new method that combines the advantages of PLD and MBE, the paper aims to synthesize high - quality (111) - oriented KTaO₃ thin films, which have higher electron mobility, superconducting transition temperature, and critical current density. 3. **Study of interface properties**: High - quality KTaO₃ thin films can be used to study quantum phenomena such as quantum paraelectricity, spin - orbit coupling, and superconductivity. In particular, the paper explores the properties of the two - dimensional electron gas (2DEG) formed at the interface between KTaO₃ and LaAlO₃. 4. **Reduction of defect concentration**: By reducing the concentration of point defects, researchers hope to better understand the origin of superconductivity in KTaO₃ - based heterojunctions and related quantum phenomena, such as ferroelectric quantum criticality, topological superconductivity, and superconducting spintronics. In summary, the main goal of this paper is to prepare high - quality (111) - oriented KTaO₃ thin films by developing a new synthesis method and to study the potential applications of these films in the field of quantum materials.