ZnS/Al2S3 Layer as a Blocking Layer in Quantum Dot Sensitized Solar Cells

Borzoo Vafapoor,Davood Fathi,Mehdi Eskandari
DOI: https://doi.org/10.1007/s11664-017-5993-8
IF: 2.1
2017-12-12
Journal of Electronic Materials
Abstract:In this research, the effect of treatment of the CdS/CdSe sensitized ZnO photoanode by ZnS, Al2S3, and ZnS/Al2S3 nanoparticles as a barrier layer on the performance of quantum dot sensitized solar cell is investigated. Current density–voltage (J–V) characteristics show that cell efficiency is enhanced from 3.62% to 4.82% with treatment of a CdS/CdSe/ZnS sensitized ZnO photoanode by Al2S3 nanoparticles. In addition, short- circuit current density (Jsc) is increased from 11.5 mA/cm2 to 14.8 mA/cm2. The results extracted from electrochemical impedance spectroscopy indicate that charge transfer resistance (Rct) in photoanode/electrolyte interfaces decreases with deposition of Al2S3 nanoparticles on CdS/CdSe/ZnS sensitized ZnO photoanodes, while the chemical capacitance of photoanode (Cμ) and electron lifetime (tn) increase. Also, results revealed that cell performance is considerably decreased with the treatment of the AL2S3 blocking layer incorporated between ZnO nanorods and CdS/CdSe QDs.
engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
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