Improving efficiency and stability of perovskite solar cells by SiO2 layer incorporation

Mei-Feng Xu,Zhe Wu,Yan Zhang,Pei Tao Zhu,Tian Xu,Chao-Nan Wang,Xiao-Hua Yang
DOI: https://doi.org/10.1016/j.orgel.2022.106583
IF: 3.868
2022-09-01
Organic Electronics
Abstract:A hydrophobicity silicon dioxide (SiO2) layer inserting in perovskite and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) interface to form PEDOT:PSS/SiO2 composite films. The formed hydrophobicity SiO2 films fabricated by a new and easy solution-process approach with a chemical reaction by sodium silicate. The PEDOT:PSS/SiO2 films present good transmittance and outstanding surface morphology. The SiO2 films also slow down CH3NH3PbI3 perovskite degradation, as well as promote charge carrier collection and reduce charge carrier recombination, what leads to high efficiency and excellent stability of the device. The 5 mg/mL SiO2 based CH3NH3PbI3 devices present a superior power conversion efficiency of 16% with an improved short-circuit current density of 20.31 mA/cm2 and a considerable fill factor of 76.3% compared to the pure PEDOT:PSS based CH3NH3PbI3 devices. Moreover no obvious hysteresis and good reproducibility was reported for devices based on the 5 mg/mL SiO2. The 5 mg/mL SiO2-based CH3NH3PbI3 device shows remarkable stability, which shows that 90% of the initial efficiency remains after 140 days at room temperature. The devices based on CH3NH3PbI3-xClx perovskite film also be fabricated by using PEDOT:PSS (with or without 5 mg/mL SiO2), the CH3NH3PbI3-xClx device based on PEDOT:PSS/SiO2 transporting layer also shows superior performance, this result verify the universality of PEDOT:PSS/SiO2 transporting layer.
materials science, multidisciplinary,physics, applied
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