Pressure-induced novel semiconductor materials with high-k in ZrN4: first-principles study
Shaoting Yao,Junzhao Li,Le Huang,Xing Xie,Huafeng Dong,Hui Long,Xin Zhang,Fugen Wu,Zhongfei Mu,Minru Wen
DOI: https://doi.org/10.1039/d3cp03949h
IF: 3.3
2023-10-04
Physical Chemistry Chemical Physics
Abstract:Except for Zr3N4 and ZrN2 compounds, zirconium nitrides with a rich family of phases always exhibit metal phases. By employing an evolutionary algorithm approach and first-principles calculations, we predicted seven novel semiconductor phases for the ZrN4 system in the pressure range of 0−150 GPa. Through the dynamical stability check of phonon dispersions, we identified five semiconductor structures that remain stable under ambient pressure, namely, α-P1-, β-P1-, γ-P1-, β-P21/m and β-P1 (with band gaps of 1.03 eV, 1.10 eV, 2.33 eV, 1.14 eV and 1.49 eV, respectively). The calculated work function and dielectric function show that the five dynamically stable semiconductor structures are all high dielectric constant (high-k) materials, and the static dielectric constant of the β-P1- phase is the largest (3.9 times that of SiO2). Furthermore, we explored band structures, density of states (DOS), and the response of band gaps to pressure for the five new semiconductor configurations. The results show that the bandgap responses of the five structures exhibit significant differences when the hydrostatic pressure is applied from 0 GPa to 150 GPa..
chemistry, physical,physics, atomic, molecular & chemical