Abstract:Among two-dimensional (2D) transition metal dichalcogenides (TMDs), MoTe2is predestined for phase-engineering applications due to the small difference in free energy between the semiconducting H-phase and metallic 1T'-phase. At the same time, the complete picture of the phase evolution originating from point defects in single-layer of semiconducting H-MoTe2via Mo6Te6nanowires to cubic molybdenum has not yet been reported so far, and it is the topic of the present study. The occurring phase transformations in single-layer H-MoTe2were initiated by 40-80 kV electrons in the spherical and chromatic aberration-corrected high-resolution transmission electron microscope and/or when subjected to high temperatures. We analyse the damage cross-section at voltages between 40 kV and 80 kV and relate the results to previously published values for other TMDs. Then we demonstrate that electron beam irradiation offers a route to locally transform freestanding single-layer H-MoTe2into one-dimensional (1D) Mo6Te6nanowires. Combining the experimental data with the results of first-principles calculations, we explain the transformations in MoTe2single-layers and Mo6Te6nanowires by an interplay of electron-beam-induced energy transfer, atom ejection, and oxygen absorption. Further, the effects emerging from electron irradiation are compared with those produced byin situannealing in a vacuum until pure molybdenum crystals are obtained at temperatures of about 1000 °C. A detailed understanding of high-temperature solid-to-solid phase transformation in the 2D limit can provide insights into the applicability of this material for future device fabrication.

Intrinsic 1$${T}^{{\prime} }$$ phase induced in atomically thin 2H-MoTe2 by a single terahertz pulse

Intrinsic 1T' Phase Induced in Atomically Thin 2H-Mote_2 by a Single Terahertz Pulse

Controllable 2H-to-1t' Phase Transition in Few-Layer MoTe2.

Ultrafast reversible phase engineering in MoTe2 thin film via polaron formation

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Phase transformations in single-layer MoTe2stimulated by electron irradiation and annealing

Light induced sub-picosecond topological phase transition in MoTe2

Light-Induced Subpicosecond Lattice Symmetry Switch in MoTe2

Ultrafast Photo-induced Phase Transition in 2D MoTe$_2$

Optical Control of Multistage Phase Transition via Phonon Coupling in MoTe 2

Soft Hydrogen Plasma Induced Phase Transition in Monolayer and Few-Layer MoTe2

Photocarrier Dynamics in MoTe<sub>2</sub> Nanofilms with 2<i>H</i> and Distorted 1<i>T</i> Lattice Structures

Spatially Controlled Phase Transition in MoTe 2 Driven by Focused Ion Beam Irradiations

Direct measurement of photoinduced transient conducting state in multilayer 2H-MoTe2

Second harmonic generation in atomically thin MoTe2

Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors.

Suppressing Electron-Phonon Coupling through Laser-Induced Phase Transition.

In situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2

Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices

Lifshitz Transition and Band Structure Evolution in Alkali Metal Intercalated 1Tprime-MoTe2

Photoinduced Vacancy Ordering and Phase Transition in MoTe2