New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector
Dae‐Young Um,Bagavath Chandran,Ji‐Yeon Kim,Jeong‐Kyun Oh,Sung‐Un Kim,Jong Uk An,Cheul‐Ro Lee,Yong‐Ho Ra
DOI: https://doi.org/10.1002/adfm.202306143
IF: 19
2023-08-26
Advanced Functional Materials
Abstract:GaN‐based UV photodetectors (PDs) are a prominent research focus due to their low voltage, durability, and energy efficiency. This study introduces innovative methods to enhance photoconductive gain in GaN‐based UV PDs. Approaches include optimizing microwire structure, analyzing strain behavior, achieving high sensitivity, and introducing a trap‐assisted energy mechanism. This research shapes future UV PDs with advanced GaN‐based materials. GaN‐based materials are the hottest research topic in UV photodetectors (PDs) because of their low operating voltage, small volume, long lifetime, high‐temperature resistance, and low energy consumption. However, there are still fundamental issues to be overcome, and the most important issue is to get a photoconductive gain. In this paper, the following new approaches are provided to innovatively improve the photoconductive gain of UV PDs in GaN‐based materials. First, the aspect ratio of the 1D GaN microwire (MW) structure is dramatically improved by analyzing the pulse growth mechanism using the metal‐organic vapor deposition system. Second, the comprehensive strain behavior in the MW epitaxial growth system is successfully analyzed. Third, the fabricated metal‐semiconductor‐metal‐based MW UV PD shows photoresponsivity and sensitivity of 28.365 A W−1 and 93.16%, respectively, at the −2 V bias, which significantly outperforms the conventional structures in the UV region. Finally, a trap‐assisted Poole–Frenkel effect‐based energy bandgap mechanism, that allows the defect level formed by lattice mismatch between the substrate and GaN to be used as an electron carrier path, is newly defined. This study will present the direction of future UV PDs by providing a new MW structure based on GaN materials, a third‐generation semiconductor.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology