35-nm InP HEMT SMMIC Amplifier With 4.4-dB Gain at 308 GHz

X. Mei,W. Yoshida,W. Deal,P. Liu,J. Lee,J. Uyeda,L. Dang,J. Wang,W. Liu,D. Li,M. Barsky,Y. Kim,M. Lange,T. Chin,V. Radisic
DOI: https://doi.org/10.1109/LED.2007.896897
IF: 4.8157
2007-05-29
IEEE Electron Device Letters
Abstract:rdquoWe report the first submillimeter-wave monolithic microwave integrated circuit (MMIC) amplifier with 4.4-dB measured gain at 308-GHz frequency, making it the highest frequency MMIC amplifier reported to date. In this letter, a 35-nm InP high-electron mobility transistor process has been successfully developed with a projected maximum available gain of greater than 7 dB at 300 GHz. The excellent dc and RF performance makes it suitable for applications at frequencies well into the millimeter-wave band and, for the first time, in the submillimeter- wave band as well.
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