Expanding Thermal Plasma deposited a-Si:H thin films for surface passivation of c-Si wafers

A. Illiberi,K. Sharma,M. Creatore,W. Kessels,M. V. D. van de Sanden
DOI: https://doi.org/10.1109/PVSC.2010.5616869
2010-06-20
Abstract:Low thermal stability of hydrogenated amorphous silicon (a-Si:H) thin films limits their widespread use for surface passivation of c-Si wafers on the rear side of solar cells. We show that thermal stability of a-Si:H surface passivation is increased significantly by a hydrogen rich a-Si:H bulk which acts as an H reservoir for the a-Si:H/c-Si interface, when a spontaneous release of H from the bulk is induced by high temperature (450°C) annealing.
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