Ge on Si p-i-n photodetectors with 40 GHz bandwidth

S. Klinger,W. Vogel,M. Berroth,M. Kaschel,M. Oehme,E. Kasper
DOI: https://doi.org/10.1109/GROUP4.2008.4638140
2008-10-07
Abstract:Germanium photodiodes grown on a silicon substrate are characterized for various diameters and thicknesses of the active absorption region. High frequency measurements using a vector network analyzer are reported for frequencies up to 45 GHz showing a record bandwidth of 40 GHz.
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