Extremely low back facet feedback by quantum-confined Stark effect absorption in an edge-emitting light-emitting diode

J. Fouquet,W. Sorin,G. Trott,M. Ludowise,D. Braun
DOI: https://doi.org/10.1109/68.215264
IF: 2.6
1993-05-01
IEEE Photonics Technology Letters
Abstract:The quantum-confined Stark effect is employed to form an integral reverse-biased absorber in a GaInAsP edge-emitting light-emitting diode. Optical low coherence reflectometry is used to measure the magnitude of reflections through this absorber. Front-facet-back-facet roundtrip reflection magnitudes are below -110 dB in devices having an antireflection coating on the front facet only. All other round trip reflections are below -80 dB. This device provides a wide usable dynamic range in optical low coherence reflectometry measurements.<<ETX>>
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