Electron-paramagnetic-resonance investigation of the iron-indium pair in silicon.

Gehlhoff,Emanuelsson,Omling,Grimmeiss
DOI: https://doi.org/10.1103/PHYSREVB.47.7025
1993-03-15
Abstract:A defect consisting of a substitutional indium and an interstitial iron ion in silicon has been studied using the electron-paramagnetic-resonance (EPR) technique. The defect is found to appear in two different configurations, where the iron ion occupies two different interstitial positions near the substitutional indium ion. In the first case the symmetry is trigonal and in the second case orthorhombic. For the orthorhombic configuration, two EPR spectra were detected and they were found to originate in transitions within the two Kramers doublets of a spin-3/2 system with a large zero-field splitting. These two spectra show a very complicated hyperfine structure, which could be successfully explained by taking the hyperfine, nuclear Zeeman, and quadrupole interactions into account. Based on the result of the analysis, we suggest that both the trigonal and the orthorhombic spectra originate in the $^{4}$${\mathit{T}}_{1}$ state of the $^{4}$F ground state of ${\mathrm{Fe}}^{+}$ (3${\mathit{d}}^{7}$), split by a cubic crystal field.
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