Abstract:Silicon carbide, as a third-generation semiconductor material, plays a pivotal role in various advanced technological applications. Its exceptional stability under extreme conditions has garnered a significant amount of attention. These superior characteristics make silicon carbide an ideal candidate material for high-frequency, high-power electronic devices and applications in harsh environments. In particular, corrosion resistance in natural or artificially acidic and alkaline environments limits the practical application of many other materials. In fields such as chemical engineering, energy conversion, and environmental engineering, materials often face severe chemical erosion, necessitating materials with excellent chemical stability as foundational materials, carriers, or reaction media. Silicon carbide exhibits outstanding performance under these conditions, demonstrating significant resistance to corrosive substances such as hydrochloric acid, sulfuric acid, nitric acid, and alkaline substances such as potassium hydroxide and sodium hydroxide. Despite the well-known chemical stability of silicon carbide, the stability conditions of its different types (such as 3C-, 4H-, and 6H-SiC polycrystals) in acidic and alkaline environments, as well as the specific corrosion mechanisms and differences, warrant further investigation. This Review not only delves deeply into the detailed studies related to this topic but also highlights the current applications of different silicon carbide polycrystals in chemical reaction systems, energy conversion equipment, and recycling processes. Through a comprehensive analysis, this Review aims to bridge research gaps, offering a comparative analysis of the advantages and disadvantages between different polymorphs. It provides material scientists, engineers, and developers with a thorough understanding of silicon carbide's behavior in various chemical environments. This work will propel the research and development of silicon carbide materials under extreme conditions, especially in areas where chemical stability is crucial for device performance and durability. It lays a solid foundation for ultra-high-power, high-integration, high-reliability module architectures, supercomputing chips, and highly safe long-life batteries.

Three new 7Tri-SiC polymorphs with innovation form and excellent stability: First-principles calculation

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Three-dimensional pentagonal silicon: Stability and properties

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

High quality and wafer-scale cubic silicon carbide single crystals

Theoretical exploring superior stiffness and strength of ternary carbosilicides TM 0.5 Si 0.5 C (TM=Cr, Mo, W) with excellent stability for extreme conditions

A comprehensive investigation on the physical properties of SiC polymorphs for high-temperature applications: A DFT study based on GGA and hybrid HSE06 exchange correlation functionals

Effects of thermal, elastic, and surface properties on the stability of SiC polytypes

A Review on Metastable Silicon Allotropes

Studies on the Geometric and Electronic Structures of Sic Polytypes

Investigating the Corrosion Resistance of Different SiC Crystal Types: From Energy Sectors to Advanced Applications

Optical properties and Mechanical properties of C, Si, Ge and 3C-SiC Materials Calculated from First Principles Theory

New stable two dimensional silicon carbide nanosheets

Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Phase Transitions and Elastic Anisotropies of SiC Polymorphs under High Pressure

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

g-SiC6 Monolayer: A New Graphene-like Dirac Cone Material with a High Fermi Velocity

A New Superior Electronic Properties Si Allotrope for Power Electronic Device Applications

First-principles calculations of electronic, optical, phononic and thermodynamic properties of C40-type TMSi2 (TM = Cr, Mo, W) disilicides

Characterization of Silicon Carbide Biphenylene Network through G0W0-BSE Calculations

Advances in SiC materials and devices: an industrial point of view