Abstract:Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodoluminescence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV[Formula: see text] emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue-shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV[Formula: see text] emitters and that grain boundaries impact SiV[Formula: see text] emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

Low-strain heteroepitaxial nanodiamonds: fabrication and photoluminescence of silicon-vacancy colour centres

Fluorescence and polarization spectroscopy of single silicon vacancy centers in heteroepitaxial nanodiamonds on iridium

Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Effect of Reactive Ion Etching on the Luminescence of GeV Color Centers in CVD Diamond Nanocrystals

Sources of Double-Wave Narrow-Band Emission Based on Diamond Nanoparticles with Simultaneously Introduced Germanium–Vacancy and Silicon–Vacancy Color Centers

Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium

Single Silicon Vacancy Centers in 10-Nanometer Diamonds for Quantum Information Applications

Towards wafer-scale diamond nano- and quantum technologies

Nanodiamonds carrying quantum emitters with almost lifetime-limited linewidths

Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds

Large-scale Fabrication of High-Density Silicon-vacancy Centers via Helium-ion Implantation of Diamond Nucleation Surface

Hybrid nanocavities for resonant enhancement of color center emission in diamond

Electrical excitation of silicon-vacancy centers in single crystal diamond

Multiphoton-Excited Fluorescence of Silicon-Vacancy Color Centers in Diamond

Vacancy–impurity centers in diamond: prospects for synthesis and applications

Low temperature investigations of single silicon vacancy colour centres in diamond

Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodes

Narrowband photoluminescence of Tin-Vacancy colour centres in Sn-doped chemical vapour deposition diamond microcrystals

Characterization of Milled High-Pressure High-Temperature NV-Center Nanodiamonds for Single-Photon Source Applications

Evaluation of single silicon vacancy centers in nanodiamonds created by ion implantation at cryogenic temperatures