Abstract:Defects in ferroelectric materials can cause microscopic strain and electron doping, which opens up new possibilities for unique physical properties in nanoelectronics. However, comprehending the relationship between these deep-buried defect configurations and the resulting physical properties is a long-term challenge. Here, utilizing the integrated differential phase imaging technique equipped in scanning transmission electron microscopy combined with energy dispersive X-ray spectroscopy, we show the full element-resolved atomic configuration of characteristic extrinsic defects in Nb-doped epitaxial BiFeO 3 thin films. Atomic-resolution characterization reveals that the Nb doping substitutes Fe at the center of an oxygen octahedron and creates Fe vacancies near the defect core, leading to the formation of one perovskite cell-wide BiNbO 3 chain that is expanded by 19% in perovskite cell volume and rotated by 45° relative to the matrix lattice. Further quantitative analysis of the defect demonstrates that the ferroelectric polarization distribution around the dopant-induced defects displays a "head-to-head" configuration, indicating the accumulation of negative charges. Supported by electron energy loss spectroscopy and density functional theory calculations, the linear defect leads to one-dimensional metallic channels embedded within the ferroelectric BiFeO 3 matrix. These atomic-scale findings establish the structure-functionality relationship of extrinsic defect in Nb-doped BiFeO 3 thin films, providing new insight into their fundamental understanding and potential use in low-dimensional nanoelectronics devices.

Microstructural evolution of charged defects in the fatigue process of polycrystalline BiFeO3 thin films

Mechanism of polarization fatigue in BiFeO 3

Multiferroic Nature of Intrinsic Point Defects in Bifeo3: A Hybrid Hartree-Fock Density Functional Study

Origin of the Enhanced Polarization in La and Mg Co-substituted BiFeO3 Thin Film during the Fatigue Process

A General Physics Model of Oxygen Vacancy Dynamics for Ferroelectricity Enhancement and Degradation in Hafnia-Based Thin Films

Enhanced Fatigue and Ferroelectric Properties in Multiferroic (ba0.7sr0.3)tio3/(bi1.05la0.05)feo3 Epitaxial Heterostructures

Phase Field Simulations on Domain Switching-Induced Toughening or Weakening in Multiferroic Composites

Dynamic evolution of oxygen vacancies during cycling in antiferroelectric HfxZr1−xO2

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Multiferroic Domain Walls in Ferroelectric PbTiO3 with Oxygen Deficiency.

The atomic configuration and metallic state of extrinsic defects in Nb-doped BiFeO 3 thin films

PROGRESS IN STUDY OF DEFECT AND ITS RELAXATION ASSOCIATED WITH FERROELECTRIC PROPERTIES IN BISMUTH TITANATE-BASED FERROELECTRICS

Non-destructive investigation of microstructure evolution due to ferroelectric fatigue in PLZT ceramics

Microscopic Insights into Fatigue Mechanism in Wurtzite Ferroelectric Al$_{0.65}$Sc$_{0.35}$N: Oxygen Infiltration Enabled Grain Amorphization Spanning Boundary to Bulk

Poling-induced Inverse Time-Dependent Microstrain Mechanisms and Post-Poling Relaxation in Bismuth Ferrite

Effect of single point defect on local properties in BiFeO3 thin film

Oxygen Deficiency Induced Deterioration In Microstructure And Magnetic Properties At Y3fe5o12/Pt Interface

A NEW MICROSCOPIC MECHANISM FOR FATIGUE BEHAVIOR IN BISMUTH LAYER STRUCTURE FERROELECTRICS

Atomic-Scale Mechanisms of Defect-Induced Retention Failure in Ferroelectrics

Enhanced Electric Conductivity at Ferroelectric Vortex Cores in Bifeo3

Constitutive Relations of Ferroelectric Ceramics with Electric Fatigue Effects