Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT

M. Hua,Yunyou Lu,Sheng-gen Liu,Cheng Liu,K. Fu,Yong Cai,Baoshun Zhang,K. J. Chen
DOI: https://doi.org/10.1109/LED.2016.2519680
IF: 4.8157
2016-01-19
IEEE Electron Device Letters
Abstract:In this letter, we demonstrate an integrated process that illustrates the compatibility of AlN/SiNx passivation with high-performance (i.e. low leakage and high breakdown) low-pressure chemical vapor deposition (LPCVD) SiNx gate dielectric for GaN-based MIS-HEMT. It is shown that the AlN/SiNx passivation structure maintains its superior capability of suppressing the current collapse after enduring high temperature of 780 °C during the LPCVD-SiNx deposition. The AlN/SiNx passivation is shown to be significantly better than the LPCVD-SiNx passivation by delivering small dynamic RON degradation, especially under high drain bias switching with VDS > 100 V.
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