A Single-Chip Full-Duplex High Speed Transceiver for Multi-Site Stimulating and Recording Neural Implants

S Abdollah Mirbozorgi,Hadi Bahrami,Mohamad Sawan,Leslie A Rusch,Benoit Gosselin

DOI: https://doi.org/10.1109/TBCAS.2015.2466592

Abstract:We present a novel, fully-integrated, low-power full-duplex transceiver (FDT) to support high-density and bidirectional neural interfacing applications (high-channel count stimulating and recording) with asymmetric data rates: higher rates are required for recording (uplink signals) than stimulation (downlink signals). The transmitter (TX) and receiver (RX) share a single antenna to reduce implant size and complexity. The TX uses impulse radio ultra-wide band (IR-UWB) based on an edge combining approach, and the RX uses a novel 2.4-GHz on-off keying (OOK) receiver. Proper isolation (>20 dB) between the TX and RX path is implemented 1) by shaping the transmitted pulses to fall within the unregulated UWB spectrum (3.1-7 GHz), and 2) by space-efficient filtering (avoiding a circulator or diplexer) of the downlink OOK spectrum in the RX low-noise amplifier. The UWB 3.1-7 GHz transmitter can use either OOK or binary phase shift keying (BPSK) modulation schemes. The proposed FDT provides dual band 500-Mbps TX uplink data rate and 100 Mbps RX downlink data rate, and it is fully integrated into standard TSMC 0.18- μm CMOS within a total size of 0.8 mm(2). The total measured power consumption is 10.4 mW in full duplex mode (5 mW at 100 Mbps for RX, and 5.4 mW at 500 Mbps or 10.8 pJ/bit for TX). Additionally, a 3-coil inductive link along with on-chip power management circuits allows to powering up the implantable transceiver wirelessly by delivering 25 mW extracted from a 13.56-MHz carrier signal, at a total efficiency of 41.6%.