Electronic Structure of the Metastable Epitaxial Rock-Salt SnSe {111} Topological Crystalline Insulator
Wencan Jin,Suresh Vishwanath,Jianpeng Liu,Lingyuan Kong,Rui Lou,Zhongwei Dai,Jerzy T. Sadowski,Xinyu Liu,Huai-Hsun Lien,Alexander Chaney,Yimo Han,Michael Cao,Junzhang Ma,Tian Qian,Shancai Wang,Malgorzata Dobrowolska,Jacek Furdyna,David A. Muller,Karsten Pohl,Hong Ding,Jerry I. Dadap,Huili Grace Xing,Richard M. Osgood
DOI: https://doi.org/10.1103/physrevx.7.041020
2017-01-01
Physical Review X
Abstract:Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe {111} thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, is used to demonstrate that a rock-salt SnSe {111} thin film epitaxially grown on Bi2Se3 has a stable Sn-terminated surface. These observations are supported by low-energy electron diffraction (LEED) intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe {111} thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe {111} thin film is shown to yield a high Fermi velocity, 0.50 x 10(6) m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.