Structural, electronic and magnetic properties of 3d metal trioxide clusters-doped monolayer graphene: A first-principles study
Muhammad Rafique,Yong Shuai,He-Ping Tan,Muhammad Hassan
DOI: https://doi.org/10.1016/j.apsusc.2016.12.017
IF: 6.7
2017-03-01
Applied Surface Science
Abstract:We present first-principles density-functional calculations for the structural, electronic and magnetic properties of monolayer graphene doped with 3d (Ti, V, Cr, Fe, Co, Mn and Ni) metal trioxide TMO3 halogen clusters. In this paper we used two approaches for 3d metal trioxide clusters (i) TMO3 halogen cluster was embedded in monolayer graphene substituting four carbon (C) atoms (ii) three C atoms were substituted by three oxygen (O) atoms in one graphene ring and TM atom was adsorbed at the hollow site of O atoms substituted graphene ring. All the impurities were tightly bonded in the graphene ring. In first case of TMO3 doped graphene layer, the bond length between CO atom was reduced and bond length between TM-O atom was increased. In case of Cr, Fe, Co and Ni atoms substitution in between the O atoms, leads to Fermi level shifting to conduction band thereby causing the Dirac cone to move into valence band, however a band gap appears at high symmetric K-point. In case of TiO3 and VO3 substitution, system exhibits semiconductor properties. Interestingly, TiO3-substituted system shows dilute magnetic semiconductor behavior with 2.00μB magnetic moment. On the other hand, the substitution of CoO3, CrO3, FeO3 and MnO3 induced 1.015μB, 2.347μB, 2.084μB and 3.584μB magnetic moment, respectively. In second case of O atoms doped in graphene and TM atoms adsorbed at the hollow site, the O atom bulges out of graphene plane and bond length between TM-O atom is increased. After TM atoms adsorption at the O substituted graphene ring the Fermi level (EF) shifts into conduction band. In case of Cr and Ni adsorption, system displays indirect band gap semiconductor properties with 0.0μB magnetic moment. Co adsorption exhibits dilute magnetic semiconductor behavior producing 0.916μB magnetic moment. Fe, Mn, Ti and V adsorption introduces band gap at high symmetric K-point also inducing 1.54μB, 0.9909μB, 1.912μB, and 0.98μB magnetic moments, respectively. Our results show that 3d metal trioxide TMO3 halogen substituted monolayer graphene has potential applications in nanoelectronics, spintronics and magnetic storage devices.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films